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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 发表日期：2019     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Li isotopes in the middle Yellow River: Seasonal variability, sources and fractionation 期刊论文 GEOCHIMICA ET COSMOCHIMICA ACTA, 2019, 卷号: 248, 页码: 88-108 作者:  Jin, ZD (Jin, Zhangdong);  Li, G (Li, Gen);  Xiao, J (Xiao, Jun);  Deng, L (Deng, Li);  Galy, A (Galy, Albert) 收藏  |  浏览/下载：49/0  |  提交时间：2019/03/04 Li isotopes  Temperature dependency  Seasonal variation  Loess weathering  The Yellow River  The Chinese Loess Plateau   Effects of cone combinations on accurate and precise Mg-isotopic determination using multi-collector inductively coupled plasma mass spectrometry 期刊论文 RAPID COMMUNICATIONS IN MASS SPECTROMETRY, 2019, 卷号: 33, 期号: 4, 页码: 351-360 作者:  Gou, LF (Gou, Long-Fei);  Deng, L (Deng, Li);  Xu, Y (Xu, Yang);  Jin, ZD (Jin, Zhangdong);  Galy, A (Galy, Albert) 收藏  |  浏览/下载：39/0  |  提交时间：2019/03/04 An Improved SPICE Model of SiC BJT Incorporating Surface Recombination Effect 期刊论文 IEEE TRANSACTIONS ON POWER ELECTRONICS, 2019, 卷号: Vol.34 No.7, 页码: 6794-6802 作者:  Wang, J;  Liang, SW;  Deng, LF;  Yin, X;  Shen, ZJ 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/17 Bipolar junction transistor (BJT)  proportional base driver  SPICE model  surface recombination effect  4H-SiC   An Improved SPICE Model of SiC BJT Incorporating Surface Recombination Effect. 期刊论文 IEEE Transactions on Power Electronics, 2019, 卷号: Vol.34 No.7, 页码: 6794-6802 作者:  Wang, J;  Liang, SW;  Deng, LF;  Yin, X;  Shen, ZJ 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/17 4H-SiC  Bipolar junction transistor (BJT)  Junctions  Numerical models  Predictive models  proportional base driver  Silicon carbide  SPICE  SPICE model  Spontaneous emission  surface recombination effect  Temperature   Optimization Design of Isolation Rings in Monolithically Integrated 1200V SiC Transistor and Antiparallel Diode for Improved Blocking Voltage 期刊论文 IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2019, 卷号: Vol.7 No.3, 页码: 1513-1518 作者:  Liang, SW;  Wang, J;  Fang, F;  Deng, LF;  Shen, ZJ 收藏  |  浏览/下载：9/0  |  提交时间：2019/12/17 4H-SiC  blocking voltage  freewheeling diode  power transistor  TCAD simulation   Explicit continuous I-V model for 2D transition metal dichalcogenide field-effect transistors 期刊论文 MICROELECTRONICS JOURNAL, 2019, 卷号: Vol.88, 页码: 61-66 作者:  Deng, LF;  Si, CM;  Huang, HQ;  Wang, J;  Wen, H 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/17 Explicit model  I-V model  2D field-effect transistor  Transition metal dichalcogenide (TMD)  Molybdenum disulphide (MoS2)  Molybdenum diselenide (MoSe2)   An Improved Proportional Base Driver for Minimizing Driver Power Consumption of SiC BJT Over Wide Current and Temperature Range 期刊论文 IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2019, 卷号: Vol.7 No.3, 页码: 1727-1735 作者:  Liang, SW;  Wang, J;  Deng, LF;  Shi, YZ;  Yin, X 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/17 4H-SiC  bipolar junction transistor (BJT)  boost converter  driver loss  gate driver   Operation Analysis and a Game Theoretic Approach to Dynamic Hybrid Compensator for the V/v Traction System 期刊论文 IEEE TRANSACTIONS ON POWER ELECTRONICS, 2019, 卷号: Vol.34 No.9, 页码: 8574-8587 作者:  Zhu, Z;  Ma, FJ;  Wang, X;  Deng, LF;  Li, GX 收藏  |  浏览/下载：14/0  |  提交时间：2019/12/17 Game theoretic approach  hybrid compensation  hybrid control  power quality  train load analysis