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An image-based method for online measurement of the size distribution of iron green pellets using dual morphological reconstruction and circle-scan 期刊论文
Powder Technology, 2019
作者:  Xin Wu;  Xiao-Yan Liu;  Wei Sun;  Chuan-Gang Mao;  Cao Yu
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/13
Bioactive Functionalized Monolayer Graphene for High-Resolution Cryo-Electron Microscopy 期刊论文
Journal of the American Chemical Society, 2019, 卷号: Vol.141 No.9, 页码: 4016-4025
作者:  Nan Liu;  Jincan Zhang;  Yanan Chen;  Chuan Liu;  Xing Zhang
收藏  |  浏览/下载:19/0  |  提交时间:2019/12/13
An image-based method for online measurement of the size distribution of iron green pellets using dual morphological reconstruction and circle-scan. 期刊论文
Powder Technology, 2019, 卷号: Vol.347, 页码: 186-198
作者:  Wu, Xin;  Liu, Xiao-Yan;  Sun, Wei;  Mao, Chuan-Gang;  Yu, Cao
收藏  |  浏览/下载:5/0  |  提交时间:2019/12/17
BrainEXP: a database featuring with spatiotemporal expression variations and co-expression organizations in human brains. 期刊论文
Bioinformatics, 2019, 卷号: Vol.35 No.1, 页码: 172-174
作者:  Jiao, Chuan;  Xia, Cuihua;  Wang, Kangli;  Jiang, Yi;  Huang, Lingling
收藏  |  浏览/下载:28/0  |  提交时间:2019/12/17
[A multicenter epidemiological investigation of brain injury in hospitalized preterm infants in Anhui, China]. 期刊论文
Chinese journal of contemporary pediatrics, 2019, 卷号: Vol.21 No.2, 页码: 114-119
作者:  Jian Zhang;  Guang-Hui Liu;  Yu-Wei Zhao;  Hui-Qin Wang;  Shuang-Gen Mao
收藏  |  浏览/下载:15/0  |  提交时间:2019/12/17
Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer 期刊论文
APPLIED PHYSICS LETTERS, 2019, 卷号: Vol.114 No.1
作者:  Zhang, Sheng;  Wei, Ke;  Ma, Xiao-Hua;  Hou, Bin;  Liu, Guo-Guo
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/17
BrainEXP: a database featuring with spatiotemporal expression variations and co-expression organizations in human brains 期刊论文
Bioinformatics, 2019, 卷号: Vol.35 No.1, 页码: 172-174
作者:  Chuan Jiao;  Pengpeng Yan;  Cuihua Xia;  Zhaoming Shen;  Zexi Tan
收藏  |  浏览/下载:25/0  |  提交时间:2019/12/13
Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer. 期刊论文
Applied Physics Letters, 2019, 卷号: Vol.114 No.1
作者:  Zhang, Sheng;  Wei, Ke;  Ma, Xiao-Hua;  Hou, Bin;  Liu, Guo-Guo
收藏  |  浏览/下载:11/0  |  提交时间:2019/12/17
Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer 期刊论文
Applied Physics Letters, 2019, 卷号: Vol.114 No.1, 页码: 013503
作者:  Sheng Zhang;  Ke Wei
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/13


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