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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 发表日期：2018     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Investigation of surface traps-induced current collapse phenomenon in AlGaN/ GaN high electron mobility transistors with schottky gate structures 期刊论文 Journal of Physics D: Applied Physics, 2018, 卷号: 51, 期号: 34, 页码: 345102 作者:  Huang Huolin;  Sun Zhonghao;  Cao Yaqing;  Li Feiyu;  Zhang Feng;  Wen Zhengxin;  Zhang Zifeng;  Liang Yung C.;  Hu Lizhong 收藏  |  浏览/下载：19/0  |  提交时间：2019/11/15 Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices 期刊论文 MICROMACHINES, 2018, 卷号: 9 作者:  Huang, Huolin;  Li, Feiyu;  Sun, Zhonghao;  Cao, Yaqing 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/02 threshold voltage (V-th) stability  gallium nitride (GaN)  high electron mobility transistors (HEMTs)  analytical model  high-temperature operation   Investigation of surface traps-induced current collapse phenomenon in AlGaN/GaN high electron mobility transistors with schottky gate structures 期刊论文 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 卷号: 51 作者:  Huang, Huolin;  Sun, Zhonghao;  Cao, Yaqing;  Li, Feiyu;  Zhang, Feng 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/02 gallium nitride (GaN)  semiconductor devices  surface donor-like traps  current collapse   Obtaining Exact Electrical Parameters in Semiconductor Ohmic Contacts Using a Novel Electrode Pair Layout Design 会议论文 2018 1ST WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA), 2018-01-01 作者:  Huang, Huolin;  Sun, Zhonghao;  Cao, Yaqing;  Li, Feiyu;  Hu, Lizhong 收藏  |  浏览/下载：15/0  |  提交时间：2019/12/02 Electrode Pair (EP)  Ohmic contact  IC design  Modelling   Targeted resequencing reveals genetic risks in patients with sporadic idiopathic pulmonary fibrosis 期刊论文 HUMAN MUTATION, 2018, 卷号: 39, 期号: 9 作者:  Deng, Yanhan;  Li, Zongzhe;  Liu, Juan;  Wang, Zheng;  Cao, Yanyan 收藏  |  浏览/下载：11/0  |  提交时间：2019/12/05 common SNP  genetic factors  idiopathic pulmonary fibrosis  next-generation sequencing  risk stratification