|
已选(0)清除
条数/页： 排序方式：
|
| Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers 期刊论文
IEEE Photonics Journal, 2018, 卷号: 10, 期号: 4, 页码: 1503107
作者: Jing Yang; Degang Zhao; Zongshum Liu; De-Sheng Jiang; Jianjun Zhu; Ping Chen; Feng Liang; S. T. Liu; Wei Liu; Yao Xing; Mo Li
  收藏 | 浏览/下载：11/0 | 提交时间：2019/11/19 |
| The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells 期刊论文
Superlattices and Microstructures, 2018, 卷号: 117, 页码: 228-234
作者: Yao Xing ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Ping Chen ; Jing Yang ; Wei Liu ; Feng Liang ; Shuangtao Liu ; Liqun Zhang ; Wenjie Wang ; Mo Li ; Yuantao Zhang ; Guotong Du
收藏 | 浏览/下载：23/0 | 提交时间：2019/11/19 |
| Anomalous electroluminescent blue-shift behavior induced by well widths variance and localization effect in InGaN/GaN multi-quantum wells 期刊论文
OPTICS EXPRESS, 2018, 卷号: 26, 期号: 17, 页码: 21736-21744
作者: LIYUAN PENG ; DEGANG ZHAO ; DESHENG JIANG ; JIANJUN ZHU ; ZONGSHUN LIU ; PING CHEN ; JING YANG ; WEI LIU ; FENG LIANG ; YAO XING ; SHUANGTAO LIU ; LIQUN ZHANG ; WENJIE WANG ; MO LI ; YUANTAO ZHANG ; GUOTONG DU
收藏 | 浏览/下载：13/0 | 提交时间：2019/11/19 |
| Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells 期刊论文
Optics Express, 2018, 卷号: 26, 期号: 3, 页码: 3427-3434
作者: WEI LIU ; DEGANG ZHAO ; DESHENG JIANG ; DONGPING SHI ; JIANJUN ZHU ; ZONGSHUN LIU ; PING CHEN ; JING YANG ; FENG LIANG ; SHUANGTAO LIU ; YAO XING ; LIQUN ZHANG ; WENJIE WANG ; MO LI ; YUANTAO ZHANG ; GUOTONG DU
收藏 | 浏览/下载：16/0 | 提交时间：2019/11/19 |
| Influence of hydrogen impurity on the resistivity of low temperature grown p-Al x Ga 1-x N layer (0.08 ? x ? 0.104) 期刊论文
Superlattices and microstructures, 2018, 卷号: 113, 页码: 720-725
作者: Feng Liang; Ying Yang; Degang Zhao; Desheng Jiang; Zongshun Liu; Jianjun Zhu; Ping Chen; Wei Liu; Shuangtao Liu; Yao Xing; Liqun Zhang; Wenjie Wang; Mo Li; Yuantao Zhang; Guotong Du
收藏 | 浏览/下载：15/0 | 提交时间：2019/11/19 |
| Energy band tilt in ultra-thin InGaN film affected by the surface adsorption and desorption 期刊论文
Applied Surface Science, 2018, 卷号: 456, 页码: 487-492
作者: Wei Liu; Jing Yang; Degang Zhao; Desheng Jiang; Jianjun Zhu; Ping Chen; Zongshun Liu; Feng Liang; Shuangtao Liu; Yao Xing; Liqun Zhang; Wenjie Wang; Mo Li; Yuantao Zhang; Guotong Du
收藏 | 浏览/下载：15/0 | 提交时间：2019/11/19 |
| Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN 期刊论文
Nanomaterials (Basel, Switzerland), 2018, 卷号: 8, 期号: 12, 页码: 1026
作者: Feng Liang; Degang Zhao; Desheng Jiang; Zongshun Liu; Jianjun Zhu; Ping Chen; Jing Yang; Shuangtao Liu; Yao Xing; Liqun Zhang
收藏 | 浏览/下载：13/0 | 提交时间：2019/11/19 |
| Improvement of slope efficiency of GaN-Based blue laser diodes by using asymmetric MQW and In x Ga 1-x N lower waveguide 期刊论文
Journal of Alloys and Compounds, 2018, 卷号: 731, 页码: 243-247
作者: Feng Liang; Degang Zhao; Desheng Jiang; Zongshun Liu; Jianjun Zhu; Ping Chen; Jing Yang; Wei Liu; Shuangtao Liu; Yao Xing; Liqun Zhang; Wenjie Wang; Mo Li; Yuantao Zhang; Guotong Du
收藏 | 浏览/下载：15/0 | 提交时间：2019/11/19 |
| Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN 期刊论文
Nanomaterials (Basel, Switzerland), 2018, 卷号: 8, 页码: 744
作者: Feng Liang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Ping Chen ; Jing Yang ; Shuangtao Liu ; Yao Xing ; Liqun Zhang ; Mo Li ; Yuantao Zhang; Guotong Du
收藏 | 浏览/下载：11/0 | 提交时间：2019/11/19 |
