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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 发表日期：2018    专题：西安交通大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 A Lagrangian Analysis of Vortex Formation in the Wake behind a Transversely Oscillating Cylinder 期刊论文 Regular and Chaotic Dynamics, 2018, 卷号: 23, 页码: 583-594 作者:  Wang, Wenhao;  Prants, Sergey V.;  Zhang, Jiazhong;  Wang, Le 收藏  |  浏览/下载：5/0  |  提交时间：2019/11/19 76D17  Lagrangian coherent structure  vortex street  vorticity   A full-range analytical current model for heterojunction TFET with dual material gate 期刊论文 IEEE Transactions on Electron Devices, 2018, 卷号: 65, 页码: 5213-5217 作者:  Guan, Yunhe;  Li, Zunchao;  Zhang, Wenhao;  Zhang, Yefei;  Liang, Feng 收藏  |  浏览/下载：13/0  |  提交时间：2019/11/19 Ambipolar behavior  Ambipolar currents  Current modeling  Drain current models  Dual material gate  Gaussian quadratures  Mobile charge  Tunnel field-effect transistors (TFET)   Phase Transition Dominated High-Rate Performances of the High Voltage LiNi0.5Mn1.5O4 Cathode: Improvement on Structure Evolution and Ionic Diffusivity by Chromium Doping 期刊论文 JOURNAL OF PHYSICAL CHEMISTRY C, 2018, 卷号: 122, 页码: 25229-25236 作者:  Li, Jiawen;  Wang, Hailong;  Dong, Wenhao;  Shi, Zhongqi;  Xie, Wenqi 收藏  |  浏览/下载：5/0  |  提交时间：2019/11/26 Thermal bubble inkjet printing of water-based graphene oxide and graphene inks on heated substrate 期刊论文 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 卷号: 51 作者:  Huang, Simin;  Shen, Ruoxi;  Qian, Bo;  Li, Lingying;  Wang, Wenhao 收藏  |  浏览/下载：9/0  |  提交时间：2019/11/26 graphene oxide and graphene inks  water-based  thermal bubble inkjet printing   Association of Antenatal Micronutrient Supplementation With Adolescent Intellectual Development in Rural Western China 14-Year Follow-up From a Randomized Clinical Trial 期刊论文 JAMA PEDIATRICS, 2018, 卷号: 172, 页码: 832-841 作者:  Zhu, Zhonghai;  Cheng, Yue;  Zeng, Lingxia;  Elhoumed, Mohamed;  He, Guobin 收藏  |  浏览/下载：4/0  |  提交时间：2019/11/26 An Analytical Model of Gate-All-Around Heterojunction Tunneling FET 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 776-782 作者:  Guan, Yunhe;  Li, Zunchao;  Zhang, Wenhao;  Zhang, Yefei;  Liang, Feng 收藏  |  浏览/下载：7/0  |  提交时间：2019/11/26 gate all around (GAA)  Analytical model  heterojunction tunneling FET (H-TFET)  drain current (I-DS)