已选(0)清除
条数/页: 排序方式:
|
| 半导体器件制造方法 专利 专利号: CN201210475097.2, 申请日期: 2017-11-21, 公开日期: 2014-06-04 作者: 崔虎山; 钟汇才 ; 项金娟 ; 赵超![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:14/0  |  提交时间:2018/04/25 |
| Mobility Degradation by Remote Coulomb Scattering and Distribution of Charge and Dipole in Al2O3/GeOx Gate Stacks of Ge Based MOSFET 会议论文 作者: Xiang JJ(项金娟) ; Zhou LX(周丽星); Wang XL(王晓磊) ; Zhao C(赵超) ; Ye TC(叶甜春)![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:14/0  |  提交时间:2018/07/26 |
| Effects of Annealing Ambient on Interface Charge and Dipole in GeOx/Al2O3 Gate Stacks of Ge Based MOSCAP 会议论文 作者: Wang XL(王晓磊) ; Xiang JJ(项金娟) ; Zhao C(赵超) ; Wang WW(王文武) ; Ye TC(叶甜春)![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:14/0  |  提交时间:2018/07/26 |
| Fabrication and Characterization of p-Channel Charge Trapping Type FOI-FinFET Memory with MAHAS Structure 期刊论文 ECS Journal of Solid State Science and Technology, 2017 作者: Gu J(顾杰); Hou CZ(侯朝昭); Zhang QZ(张青竹); Yin HX(殷华湘); Xiang JJ(项金娟)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:14/0  |  提交时间:2018/07/05 |
| The Challenges of Advanced CMOS Process from 2D to 3D 期刊论文 Applied Sciences, 2017 作者: Wang GL(王桂磊); Gu SH(顾世海); Liu JB(刘金彪); Xiang JJ(项金娟); Li JJ(李俊杰)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:10/0  |  提交时间:2018/07/05 |
| 用于薄膜沉积的铝前驱体及其制备方法 专利 专利号: CN201410532553.1, 申请日期: 2017-09-15, 公开日期: 2016-04-20 作者: 项金娟 ; 王大伟; 苗红艳; 杨淑艳; 许从应
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:23/0  |  提交时间:2018/04/24 |
| Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High-Dielectrics and SiGe Epitaxial Substrates 期刊论文 CHINESE PHYSICS LETTERS, 2017 作者: Zhang QZ(张青竹) ; Wu ZH(吴振华) ; Yin HX(殷华湘) ; Wang GL(王桂磊) ; Hou CZ(侯朝昭)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:13/0  |  提交时间:2018/07/05 |
| Hole mobility degradation by remote Coulomb scattering and charge distribution in Al2O3/GeOx gate stacks in bulk Ge pMOSFET with GeOx grown by ozone oxidation 期刊论文 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2017 作者: Ye TC(叶甜春) ; Zhou LX(周丽星); Wang XL(王晓磊) ; Ma XL(马雪丽) ; Xiang JJ(项金娟)![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:7/0  |  提交时间:2018/07/09 |
| Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFET 期刊论文 IEEE Transactrions on Elelctron Diveces, 2017 作者: Wang SK(王盛凯) ; Han K(韩楷) ; Wang WW(王文武) ; Ye TC(叶甜春) ; Zhao C(赵超)![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:15/0  |  提交时间:2018/07/09 |
| Hot Implantations of P into Ge: Impact on the Diffusion Profile 期刊论文 ECS Journal of Solid State Science and Technology, 2017 作者: Xiang JJ(项金娟) ; Eddy Simoen ; Luo J(罗军) ; Liu JB(刘金彪) ; Ye TC(叶甜春)![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:14/0  |  提交时间:2018/06/08 |