CORC

浏览/检索结果: 共10条,第1-10条 帮助

限定条件                    
已选(0)清除 条数/页:   排序方式:
Comparative study of the differential resistance of GaAs- and GaN-based laser diodes 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2016, 卷号: 34, 期号: 4
作者:  Li, X;  Liu, ZS;  Zhao, DG;  Jiang, DS;  Chen, P
收藏  |  浏览/下载:21/0  |  提交时间:2017/03/11
Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses 期刊论文
VACUUM, 2016, 卷号: 129
作者:  Yang, J;  Zhao, DG;  Jiang, DS;  Chen, P;  Zhu, JJ
收藏  |  浏览/下载:17/0  |  提交时间:2017/03/11
GaN high electron mobility transistors with AlInN back barriers 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 662
作者:  He, XG;  Zhao, DG;  Jiang, DS;  Zhu, JJ;  Chen, P
收藏  |  浏览/下载:18/0  |  提交时间:2017/03/11
Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2016, 卷号: 34, 期号: 1
作者:  Yang, J;  Zhao, DG;  Jiang, DS;  Chen, P;  Zhu, JJ
收藏  |  浏览/下载:16/0  |  提交时间:2017/03/11
Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films 期刊论文
CHINESE PHYSICS B, 2016, 卷号: 25, 期号: 2
作者:  Yang, J;  Zhao, DG;  Jiang, DS;  Chen, P;  Liu, ZS
收藏  |  浏览/下载:24/0  |  提交时间:2017/03/11
Photovoltaic Response of InGaN/GaN Multi-quantum Well Solar Cells Enhanced by Reducing p-type GaN Resistivity 期刊论文
IEEE JOURNAL OF PHOTOVOLTAICS, 2016, 卷号: 6, 期号: 2
作者:  Yang, J;  Zhao, DG;  Jiang, DS;  Chen, P;  Zhu, JJ
收藏  |  浏览/下载:17/0  |  提交时间:2017/03/11
Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2016, 卷号: 34, 期号: 1
作者:  Li, XJ;  Zhao, DG;  Jiang, D;  Chen, P;  Zhu, JJ
收藏  |  浏览/下载:15/0  |  提交时间:2017/03/11
Investigation of breakdown mechanism during field emission process of AlN thin film microscopic cold cathodee 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2016, 卷号: 34, 期号: 1
作者:  Liang, F;  Chen, P;  Zhao, DG;  Jiang, DS;  Liu, ZS
收藏  |  浏览/下载:47/0  |  提交时间:2017/03/11
XPS study of impurities in Si-doped AlN film 期刊论文
SURFACE AND INTERFACE ANALYSIS, 2016, 卷号: 48, 期号: 12
作者:  Liang, F;  Chen, P;  Zhao, DG;  Jiang, DS;  Zhao, ZJ
收藏  |  浏览/下载:28/0  |  提交时间:2017/03/11
The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文
AIP ADVANCES, 2016, 卷号: 6, 期号: 3
作者:  Chen, P;  Zhao, DG;  Jiang, DS;  Zhu, JJ;  Liu, ZS
收藏  |  浏览/下载:16/0  |  提交时间:2017/03/11


©版权所有 ©2017 CSpace - Powered by CSpace