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REDUCTION OF CRYSTALLINE DISORDER IN MOLECULAR-BEAM EPITAXY GAAS ON SI BY MEV ION-IMPLANTATION AND SUBSEQUENT ANNEALING 期刊论文
JOURNAL OF APPLIED PHYSICS, 1992, 卷号: 71, 期号: 10, 页码: 4843
XIAO, GM; YIN, SD; ZHANG, JP; DONG, AH; ZHU, PR; LIU, JR
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