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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 专题：近代物理研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Recrystallization effects in GeV Bi ion implanted 4H-SiC Schottky barrier diode investigated by cross-sectional Micro-Raman spectroscopy 期刊论文 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2020, 卷号: 478, 页码: 5-10 作者:  Huang, Mingmin;  Yang, Zhimei;  Wang, Shaomin;  Liu, Jiyuan;  Gong, Min 收藏  |  浏览/下载：29/0  |  提交时间：2021/12/15 Schottky barrier diodes  Raman spectroscopy  Recrystallization effect  Swift heavy ion  SiC   Damage and recovery behavior of 4H-SiC implanted with He ions 期刊论文 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 卷号: 449, 页码: 54-57 作者:  Zhang, Chonghong;  Yang, Yitao;  Su, Changhao;  Ding, Zhaonan;  Song, Yin 收藏  |  浏览/下载：99/0  |  提交时间：2019/11/10 4H-SiC  He ions implantation  Nanoindentation  Raman  Graphite  Thermal annealing   Degradation mechanisms of optoelectric properties of GaN via highly-charged Bi-209(33+) ions irradiation 期刊论文 APPLIED SURFACE SCIENCE, 2018, 卷号: 440, 页码: 814-820 作者:  Xian, Y. Q.;  Zhang, L. Q.;  Li, J. Y.;  Su, C. H.;  Chen, Y. G. 收藏  |  浏览/下载：36/0  |  提交时间：2018/05/22 GaN  Highly-charged bismuth-ion irradiation  Raman spectrum  Varying temperature photoluminescence (PL) spectrum  Optoelectric properties   Structures and optical properties of H-2(+)-implanted GaN epi-layers 期刊论文 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2015, 卷号: 48 作者:   收藏  |  浏览/下载：27/0  |  提交时间：2018/07/05 Gan Epitaxial Films  H-2(+) Implantation  Implantation Damage  Cross-sectional Transmission Electron Microscopy  Dislocation Loops   Damage accumulation in gallium nitride irradiated with various energetic heavy ions 期刊论文 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 卷号: 256, 期号: 1, 页码: 199-206 作者:  Zhang, C. H.;  Song, Y.;  Sun, Y. M.;  Chen, H.;  Yang, Y. T. 收藏  |  浏览/下载：12/0  |  提交时间：2010/10/29 GaN  swift heavv ions  slow highly-charged ions  RBS-channeling  Raman scattering  TEM