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Effect of heavy ion irradiation on the interface traps of AlGaN/GaN high electron mobility transistors 期刊论文
CHINESE PHYSICS B, 2022, 卷号: 31, 期号: 3, 页码: 6
作者:  Lin, Zheng-Zhao;  Lu, Ling;  Zheng, Xue-Feng;  Cao, Yan-Rong;  Hu, Pei-Pei
收藏  |  浏览/下载：23/0  |  提交时间：2022/04/11
In situ transmission electron microscopy study and molecular dynamics simulation of dislocation loop evolution in FeCrAl alloys under Fe+ irradiation 期刊论文
MATERIALS TODAY ENERGY, 2021, 卷号: 21, 页码: 12
作者:  Li, Y. P.;  Yu, M. S.;  Ran, G.;  Gao, N.;  Chen, Y.
收藏  |  浏览/下载：15/0  |  提交时间：2021/12/08
Surface effect on < 100 > interstitial dislocation loop in iron 期刊论文
ACTA PHYSICA SINICA, 2020, 卷号: 69, 期号: 3, 页码: 8
作者:  Liang Jin-Jie;  Gao Ning;  Li Yu-Hong
收藏  |  浏览/下载：14/0  |  提交时间：2022/01/18
Electronic transport in MoSe2 FETs modified by latent tracks created by swift heavy ion irradiation 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2019, 卷号: 52, 页码: 125102
作者:  Zhang, S. X.;  Liu, J.;  Zeng, J.;  Hu, P. P.;  Maaz, K.
收藏  |  浏览/下载：56/0  |  提交时间：2019/04/02
Degradation in AlGaN/GaN HEMTs irradiated with swift heavy ions: Role of latent tracks 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2018, 卷号: 430, 页码: 59-63
作者:  Hu, P. P.;  Liu, J.;  Zhang, S. X.;  Maaz, K.;  Zeng, J.
收藏  |  浏览/下载：26/0  |  提交时间：2018/10/08
Degradation mechanisms of optoelectric properties of GaN via highly-charged Bi-209(33+) ions irradiation 期刊论文
APPLIED SURFACE SCIENCE, 2018, 卷号: 440, 页码: 814-820
作者:  Xian, Y. Q.;  Zhang, L. Q.;  Li, J. Y.;  Su, C. H.;  Chen, Y. G.
收藏  |  浏览/下载：36/0  |  提交时间：2018/05/22
Damage to epitaxial GaN layer on Al2O3 by 290-MeV U-238(32+) ions irradiation 期刊论文
SCIENTIFIC REPORTS, 2018, 卷号: 8, 页码: 4121
作者:  Zhang, L. Q.;  Zhang, C. H.;  Li, J. J.;  Meng, Y. C.;  Yang, Y. T.
收藏  |  浏览/下载：28/0  |  提交时间：2018/05/31
Influence of highly-charged Bi-209(33+) irradiation on structure and optoelectric characteristics of GaN epilayer 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2017, 卷号: 406, 页码: 571-577
作者:  Li, Jj.;  Zhang, C. H.;  Zhang, L. Q.;  Song, Y.;  Yan, T. X.
收藏  |  浏览/下载：10/0  |  提交时间：2018/05/08
Influence of highly-charged Bi-209(33+) irradiation on structure and optoelectric characteristics of GaN epilayer 会议论文
作者:  Song, Y.;  Zhang, L. Q.;  Zhang, C. H.;  Xu, C. L.;  Li, Jj.
收藏  |  浏览/下载：14/0  |  提交时间：2018/08/20
Influence of highly-charged Bi-209(33+) irradiation on structure and optoelectric characteristics of GaN epilayer 会议论文
作者:  Yang, Y. T.;  Li, J. Y.;  Liu, H. P.;  Ding, Z. N.;  Yan, T. X.
收藏  |  浏览/下载：16/0  |  提交时间：2018/08/20

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