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| Performance comparison between the InAs-based and GaSb-based type-II superlattice photodiodes for long wavelength infrared detection 期刊论文
OPTICS EXPRESS, 2017, 卷号: 25, 期号: 3, 页码: 1629-1635
作者: Wang FF; Chen JX; Xu ZC; Zhou Y; He L
  收藏 | 浏览/下载：20/0 | 提交时间：2018/11/20 |
| Electrical and optical performances of InGaAs/GaAsSb superlattice short-wavelength infrared detectors 期刊论文
OPTICAL ENGINEERING, 2017, 卷号: 56, 期号: 5
作者: Jin C; Chen JX; Xu QQ; Yu CZ; He L
收藏 | 浏览/下载：35/0 | 提交时间：2018/11/20
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| Beryllium compensation doped InGaAs/GaAsSb superlattice photodiodes 会议论文
作者: Jin C; Wang FF; Xu QQ; Yu CZ; Chen JX
收藏 | 浏览/下载：27/0 | 提交时间：2018/11/20 |
| High performance InAs/GaAsSb superlattice long wavelength infrared photo-detectors grown on InAs substrates 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2017, 卷号: 32, 期号: 5
作者: Xu ZC; Chen JX; Wang FF; Zhou Y; He L
收藏 | 浏览/下载：22/0 | 提交时间：2018/11/20
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| MBE growth and characterization of type-II InAs/GaSb superlattices LWIR materials and photodetectors with barrier structures 会议论文
作者: Xu ZC; Chen JX; Wang FF; Zhou Y; Bai ZZ
收藏 | 浏览/下载：27/0 | 提交时间：2018/11/20 |
| How to Use Type II InAs/GaSb Superlattice Structure to Reach Detection Wavelength of 2-3 mu m 期刊论文
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2012, 卷号: 48, 期号: 10
作者: Huang, JL; Ma, WQ; Wei, Y; Zhang, YH; Cui, K
收藏 | 浏览/下载：9/0 | 提交时间：2013/03/18 |
| High quality of InAsSb epilayer with cutoff wavelength longer than 10 mu m grown on GaAs by the modified LPE technique 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2009, 卷号: 311, 页码: 2309-2312
作者: Hu SH(胡淑红)
收藏 | 浏览/下载：8/0 | 提交时间：2011/07/14 |
| Cutoff wavelength of Hg1xCdxTe epilayers by infrared photoreflectance spectroscopy 期刊论文
Applied Physics Letters, 2007, 卷号: 90
作者: JunShao; XiangLü; WeiLu; FangyuYue; WeiHuangetal.
收藏 | 浏览/下载：5/0 | 提交时间：2011/10/11 |
| Electrical Properties of Melt-Epitaxy-Grown InAs0:04Sb0:96 Layerswith Cutoff Wavelength of 12μm 期刊论文
Japanese Journal of Applied Physics Part 1-regular Papers Short Notes & Review Papers, 2004, 卷号: 43, 期号: 3
作者: Yu Zhu GAO; Xiu Ying GONG; Yong Sheng GUI; Tomuo YAMAGUCHI1 and Ning DAI
收藏 | 浏览/下载：9/0 | 提交时间：2011/11/30 |
| InNAsSb Single Crystals with Cutoff Wavelength of 11–13.5μm Grown by Melt Epitaxy 期刊论文
Physics Part 1-Regular Papers Short Notes & Review Papers, 2003, 卷号: 42, 期号: 7A
作者: Yu Zhu GAO; Tomuo YAMAGUCHI; Xiu Ying GONG; Hirofumi KAN; Mitsuru AOYAMA
收藏 | 浏览/下载：13/0 | 提交时间：2011/11/30 |
