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CORC

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Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:  Song HP;  Wei HY;  Li CM;  Jiao CM
收藏  |  浏览/下载：66/4  |  提交时间：2011/07/05
Formation of silicon nanocrystals embedded in high-kappa dielectric HfO2 and their application for charge storage 期刊论文
journal of vacuum science & technology b, 2011, 卷号: 29, 期号: 2, 页码: article no.21018
Li WL; Jia R; Chen C; Li HF; Liu XY; Yue HH; Ding WC; Ye TC; Kasai S; Hashizume T; Wu NJ; Xu BS
收藏  |  浏览/下载：38/2  |  提交时间：2011/07/05
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42
作者:  Song HP;  Shi K;  Sang L;  Wei HY
收藏  |  浏览/下载：58/3  |  提交时间：2011/07/05
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801
Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Chen GF (Chen Gui-Feng); Zhang SM (Zhang Shu-Ming); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhao DG (Zhao De-Gang); Wang H (Wang Hui); Wang YT (Wang Yu-Tian); Yang H (Yang Hui)
收藏  |  浏览/下载：127/4  |  提交时间：2010/04/13
Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111) 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038103
Wang H (Wang Hui); Liang H (Liang Hu); Wang Y (Wang Yong); Ng KW (Ng Kar-Wei); Deng DM (Deng Dong-Mei); Lau KM (Lau Kei-May)
收藏  |  浏览/下载：96/3  |  提交时间：2010/04/22
Evolution of surface morphology and photoluminescence characteristics of 1.3-mu m In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 期刊论文
chinese optics letters, 2009, 卷号: 7, 期号: 1, 页码: 52-55
Wei QX; Ren ZW; He ZH; Niu ZC
收藏  |  浏览/下载：76/0  |  提交时间：2010/03/08
Temperature Insensitivity of Optical Properties of InAs/GaAs Quantum Dots due to a Pregrown InGaAs Quantum Well 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 017802
作者:  Jin P
收藏  |  浏览/下载：167/34  |  提交时间：2010/03/08
Raman scattering study on Ga1-xMnxAs prepared by Mn ions implantation, deposition and post-annealing 期刊论文
crystal research and technology, 2009, 卷号: 44, 期号: 2, 页码: 215-220
Islam MR; Chen NF; Yamada M
收藏  |  浏览/下载：224/44  |  提交时间：2010/03/08
Using different carrier gases to control AlN film stress and the effect on morphology, structural properties and optical properties 期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 23, 页码: 7462-7466
Hu, WG; Liu, XL; Jiao, CM; Wei, HY; Kang, TT; Zhang, PF; Zhang, RQ; Fan, HB; Zhu, QS
收藏  |  浏览/下载：55/4  |  提交时间：2010/03/08
Dependence of intrinsic defects in ZnO films on oxygen fraction studied by positron annihilation 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 2, 页码: 489-492
Peng CX; Weng HM; Yang XJ; Ye BJ; Cheng B; Zhou XY; Han RD
收藏  |  浏览/下载：235/9  |  提交时间：2010/04/11

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