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科研机构
半导体研究所 [77]
内容类型
期刊论文 [68]
会议论文 [9]
发表日期
2011 [2]
2010 [2]
2009 [3]
2008 [8]
2006 [6]
2005 [4]
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半导体物理 [27]
半导体材料 [21]
光电子学 [3]
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Abnormal temperature dependent photoluminescence of excited states of inas/gaas quantum dots: carrier exchange between excited states and ground states
期刊论文
Journal of applied physics, 2011, 卷号: 109, 期号: 11, 页码: 5
作者:
Zhou, X. L.
;
Chen, Y. H.
;
Ye, X. L.
;
Xu, Bo
;
Wang, Z. G.
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2019/05/12
Optical identification of electronic state levels of an asymmetric inas/ingaas/gaas dot-in-well structure
期刊论文
Nanoscale research letters, 2011, 卷号: 6, 期号: 1
作者:
Zhou,Xiaolong
;
Chen,Yonghai
;
Xu,Bo
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2019/05/12
Electron spin dynamics in heavily Mn-doped (Ga,Mn)As
期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 26, 页码: article no.262109
作者:
Chen L
;
Zhang XH
收藏
  |  
浏览/下载:63/6
  |  
提交时间:2011/07/05
SEMICONDUCTORS
TEMPERATURE
GAAS
Frequency-Pushing Effect in Single-Mode Diode Laser Subject to External Dual-Beam Injection
期刊论文
ieee journal of quantum electronics, 2010, 卷号: 46, 期号: 5, 页码: 796-803
作者:
Wang LX
;
Ke JH
收藏
  |  
浏览/下载:69/6
  |  
提交时间:2011/07/05
Dual lasers
four-wave mixing
frequency-pushing effect
injection-locked diode laser
optical frequency conversion
SMALL-SIGNAL ANALYSIS
CAVITY SEMICONDUCTOR-LASERS
OPTICAL-INJECTION
NONLINEAR DYNAMICS
LIGHT INJECTION
CONVERSION
LOCKING
MODULATION
BANDWIDTH
FEEDBACK
Structure, magnetization, and low-temperature spin dynamic behavior of zincblende Mn-rich Mn(Ga)As nanoclusters embedded in GaAs
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 5, 页码: art. no. 053912
Wang WZ
;
Deng JJ
;
Lu J
;
Sun BQ
;
Wu XG
;
Zhao JH
收藏
  |  
浏览/下载:214/74
  |  
提交时间:2010/03/08
annealing
Curie temperature
ferromagnetic materials
gallium arsenide
III-V semiconductors
magnetic susceptibility
magnetisation
manganese compounds
nanofabrication
nanostructured materials
RKKY interaction
semiconductor thin films
semimagnetic semiconductors
spin dynamics
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:
Zhang XW
;
You JB
;
Yin ZG
收藏
  |  
浏览/下载:70/1
  |  
提交时间:2010/03/08
annealing
carrier density
carrier mobility
diffusion
electrical conductivity
electrical resistivity
hydrogen
II-VI semiconductors
impurity states
interstitials
light transmission
plasma materials processing
semiconductor thin films
sputter deposition
vacancies (crystal)
visible spectra
wide band gap semiconductors
zinc compounds
Dislocation core effect scattering in a quasitriangle potential well
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102
作者:
Wei HY
收藏
  |  
浏览/下载:236/104
  |  
提交时间:2010/03/08
aluminium compounds
carrier density
carrier mobility
dislocation density
dislocation scattering
gallium compounds
III-V semiconductors
semiconductor heterojunctions
wide band gap semiconductors
Comment on "use of si(+) pre-ion-implantation on si substrate to enhance the strain relaxation of the ge(x)si(1-x) metamorphic buffer layer for the growth of ge layer on si substrate" [appl. phys. lett. 90, 083507 (2007)]
期刊论文
Applied physics letters, 2008, 卷号: 93, 期号: 15, 页码: 2
作者:
Zhou, Zhiwen
;
Li, Cheng
;
Chen, Songyan
;
Lai, Hongkai
;
Yu, Jinzhong
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2019/05/12
Temperature dependence of photoluminescence from single and ensemble inas/gaas quantum dots
期刊论文
Chinese physics letters, 2008, 卷号: 25, 期号: 9, 页码: 3440-3443
作者:
Dou Xiu-Ming
;
Sun Bao-Quan
;
Xiong Yong-Hua
;
Huang She-Song
;
Ni Hai-Qiao
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2019/05/12
Neutron irradiation effect in two-dimensional electron gas of algan/gan heterostructures
期刊论文
Chinese physics letters, 2008, 卷号: 25, 期号: 3, 页码: 1045-1048
作者:
Zhang Ming-Lan
;
Wang Xiao-Liang
;
Xiao Hong-Ling
;
Wang Cui-Mei
;
Ran Jun-Xue
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2019/05/12
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