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Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Pan X
收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14
Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1) 期刊论文
materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 97-100
Wei, M; Wang, XL; Pan, X; Xiao, HL; Wang, CM; Hou, QF; Wang, ZG
收藏  |  浏览/下载：26/0  |  提交时间：2012/01/06
Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 7, 页码: art. no. 076804
Guo X (Guo Xi); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Qiu YX (Qiu Yong-Xin); Xu K (Xu Ke); Yang H (Yang Hui)
收藏  |  浏览/下载：63/0  |  提交时间：2010/08/17
Influence of aln buffer thickness on gan grown on si(111) by gas source molecular beam epitaxy with ammonia 期刊论文
Chinese physics letters, 2008, 卷号: 25, 期号: 11, 页码: 4097-4100
作者:  Lin Guo-Qiang;  Zeng Yi-Ping;  Wang Xiao-Liang;  Liu Hong-Xin
收藏  |  浏览/下载：13/0  |  提交时间：2019/05/12
High-temperature AlN interlayer for crack-free AlGaN growth on GaN 期刊论文
journal of applied physics, 2008, 卷号: 104, 期号: 4, 页码: art. no. 043516
Sun, Q; Wang, JT; Wang, H; Jin, RQ; Jiang, DS; Zhu, JJ; Zhao, DG; Yang, H; Zhou, SQ; Wu, MF; Smeets, D; Vantomme, A
收藏  |  浏览/下载：73/0  |  提交时间：2010/03/08
Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 11, 页码: 4097-4100
Lin, GQ; Zeng, YP; Wang, XL; Liu, HX
收藏  |  浏览/下载：18/0  |  提交时间：2010/03/08
Spatial variation of optical and structural properties of elo gan directly grown on patterned sapphire by hvpe 期刊论文
Journal of physics d-applied physics, 2007, 卷号: 40, 期号: 9, 页码: 2881-2885
作者:  Wei, T. B.;  Duan, R. F.;  Wang, J. X.;  Li, J. M.;  Huo, Z. Q.
收藏  |  浏览/下载：13/0  |  提交时间：2019/05/12
Influence of AlN thickness on strain evolution of GaN layer grown on high-temperature AlN interlayer 期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 17, 页码: 5252-5255
Liu, W (Liu, W.); Wang, JF (Wang, J. F.); Zhu, JJ (Zhu, J. J.); Jiang, DS (Jiang, D. S.); Yang, H (Yang, H.)
收藏  |  浏览/下载：56/0  |  提交时间：2010/03/29
STRESS  
Spatial variation of optical and structural properties of ELO GaN directly grown on patterned sapphire by HVPE 期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 9, 页码: 2881-2885
作者:  Wei TB;  Duan RF
收藏  |  浏览/下载：31/0  |  提交时间：2010/03/29
Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition 期刊论文
optical materials, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231
Wu JJ (Wu Jiejun); Han XX (Han Xiuxun); Li JM (Li Jiemin); Wei HY (Wei Hongyuan); Cong GW (Cong Guangwei); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping); Hu TD (Hu Tiandou); Wang HH (Wang Huanhua)
收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11

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