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CORC

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Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Pan X
收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14
Controlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism 期刊论文
Acta physica sinica, 2010, 卷号: 59, 期号: 2, 页码: 1169-1174
作者:  Peng Ying-Cai;  Fan Zhi-Dong;  Bai Zhen-Hua;  Ma Lei
收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12
Controlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism 期刊论文
acta physica sinica, 2010, 卷号: 59, 期号: 2, 页码: 1169-1174
Peng YC (Peng Ying-Cai); Fan ZD (Fan Zhi-Dong); Bai ZH (Bai Zhen-Hua); Ma L (Ma Lei)
收藏  |  浏览/下载：140/29  |  提交时间：2010/04/21
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801
Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Chen GF (Chen Gui-Feng); Zhang SM (Zhang Shu-Ming); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhao DG (Zhao De-Gang); Wang H (Wang Hui); Wang YT (Wang Yu-Tian); Yang H (Yang Hui)
收藏  |  浏览/下载：127/4  |  提交时间：2010/04/13
Tensile and compressive mechanical behavior of twinned silicon carbide nanowires 期刊论文
acta materialia, 2010, 卷号: 58, 期号: 6, 页码: 1963-1971
作者:  Li JB
收藏  |  浏览/下载：63/1  |  提交时间：2010/04/22
An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells 期刊论文
journal of alloys and compounds, 2010, 卷号: 489, 期号: 2, 页码: 461-464
作者:  Wang YT;  Zhao DG;  Zhang SM;  Yang H;  Jiang DS
收藏  |  浏览/下载：146/11  |  提交时间：2010/04/04
Spatial variation of optical and structural properties of elo gan directly grown on patterned sapphire by hvpe 期刊论文
Journal of physics d-applied physics, 2007, 卷号: 40, 期号: 9, 页码: 2881-2885
作者:  Wei, T. B.;  Duan, R. F.;  Wang, J. X.;  Li, J. M.;  Huo, Z. Q.
收藏  |  浏览/下载：13/0  |  提交时间：2019/05/12
Spatial variation of optical and structural properties of ELO GaN directly grown on patterned sapphire by HVPE 期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 9, 页码: 2881-2885
作者:  Wei TB;  Duan RF
收藏  |  浏览/下载：31/0  |  提交时间：2010/03/29
Optical band gap of zinc nitride films prepared on quartz substrates from a zinc nitride target by reactive rf magnetron sputtering 期刊论文
Applied surface science, 2006, 卷号: 252, 期号: 22, 页码: 7983-7986
作者:  Zong, Fujian;  Ma, Honglei;  Du, Wei;  Ma, Jin;  Zhang, Xijian
收藏  |  浏览/下载：23/0  |  提交时间：2019/05/12
Strain evolution in GaN layers grown on high-temperature AlN interlayers 期刊论文
applied physics letters, 2006, 卷号: 89, 期号: 15, 页码: art.no.152105
Wang JF (Wang J. F.); Yao DZ (Yao D. Z.); Chen J (Chen J.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Jiang DS (Jiang D. S.); Yang H (Yang H.); Liang JW (Liang J. W.)
收藏  |  浏览/下载：31/0  |  提交时间：2010/04/11

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