QQ客服 官方微博 反馈留言

浏览/检索结果: 共4条，第1-4条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Optical study of localized and delocalized states in GaAsN/GaAs 会议论文 symposium on gan and related alloys held at the mrs fall meeting, boston, ma, dec 01-05, 2003 作者:  Tan PH 收藏  |  浏览/下载：17/0  |  提交时间：2010/10/29 MOLECULAR-BEAM EPITAXY  ALLOYS  GAAS1-XNX  PHOTOLUMINESCENCE  RELAXATION   Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells 期刊论文 international journal of modern physics b, 2002, 卷号: 16, 期号: 28-29, 页码: 4211-4214 Cheng BW; Zhang JG; Zuo YH; Mao RW; Huang CJ; Luo LP; Yao F; Wang QM 收藏  |  浏览/下载：27/0  |  提交时间：2010/08/12 SI-GE ALLOYS  GROWTH  LAYERS   Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells 会议论文 symposium on silicon-based heterostructure materials held at the 8th iumrs international conference on electronic materials (iumrs-icem2002), xian, peoples r china, jun 10-14, 2002 Cheng BW; Zhang JG; Zuo YH; Mao RW; Huang CJ; Luo LP; Yao F; Wang QM 收藏  |  浏览/下载：9/0  |  提交时间：2010/11/15 SI-GE ALLOYS  GROWTH  LAYERS   Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers 会议论文 10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998 Peng CS; Chen H; Zhao ZY; Li JH; Dai DY; Huang Q; Zhou JM; Zhang YH; Tung CH; Sheng TT; Wang J 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 THREADING DISLOCATION  SI(100)  LAYERS  FILMS