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Two-color in0.4ga0.6as/al0.1ga0.9as quantum dot infrared photodetector with double tunneling barriers 期刊论文
Applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: 3
作者:  Huang, Jianliang;  Ma, Wenquan;  Wei, Yang;  Zhang, Yanhua;  Huo, Yongheng
收藏  |  浏览/下载:19/0  |  提交时间:2019/05/12
Two-color In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetector with double tunneling barriers 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: article no.103501
作者:  Cui K
收藏  |  浏览/下载:52/2  |  提交时间:2011/07/06
A novel contactless method for characterization of semiconductors: surface electron beam induced voltage in scanning electron microscopy 期刊论文
Chinese physics letters, 2002, 卷号: 19, 期号: 9, 页码: 1329-1332
作者:  Zhu, SQ;  Rau, EI;  Yang, FH;  Zheng, HZ
收藏  |  浏览/下载:16/0  |  提交时间:2019/05/12
A novel contactless method for characterization of semiconductors: Surface electron beam induced voltage in scanning electron microscopy 期刊论文
chinese physics letters, 2002, 卷号: 19, 期号: 9, 页码: 1329-1332
Zhu SQ; Rau EI; Yang FH; Zheng HZ
收藏  |  浏览/下载:42/0  |  提交时间:2010/08/12


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