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Impact of graphene interlayer on performance parameters of sandwich structure Pt/GaN Schottky barrier diodes 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 卷号: 53, 期号: 40, 页码: 404003
作者:  J X Ran;   B Y Liu;   X L Ji;   A Fariza;   Z T Liu;   J X Wang;   P Gao;   T B Wei
收藏  |  浏览/下载：31/0  |  提交时间：2021/05/24
InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure 期刊论文
Applied Physics Letters, 2019, 卷号: 114, 页码: 053509
作者:  Biying Nie;   Jianliang Huang;   Chengcheng Zhao;   Wenjun Huang;   Yanhua Zhang;   Yulian Cao;   Wenquan Ma
收藏  |  浏览/下载：7/0  |  提交时间：2020/07/30
Short-wave infrared detector with double barrier structure and low dark current density 期刊论文
chinese optics letters, 2016, 卷号: 14, 期号: 2, 页码: 022501
Kangming Pei; Zhongtao Qiao; Jianhui Chen; Fengqi Gao; Baochen Li; Zhichuan Niu
收藏  |  浏览/下载：16/0  |  提交时间：2017/03/10
A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold 期刊论文
superlattices and microstructures, 2015, 卷号: 80, 期号: 2015, 页码: 111–117
X. Li; D.G. Zhao; D.S. Jiang; P. Chen; Z.S. Liu; M. Shi; D.M. Zhao; W. Liu; J.J. Zhu; S.M. Zhang; H. Yang
收藏  |  浏览/下载：23/0  |  提交时间：2016/03/23
540-meV Hole Activation Energy for GaSb/GaAs Quantum Dot Memory Structure Using AlGaAs Barrier 期刊论文
ieee electron device letters, 2013, 卷号: 34, 期号: 6, 页码: 759-761
Cui, Kai; Ma, Wenquan; Zhang, Yanhua; Huang, Jianliang; Wei, Yang; Cao, Yulian; Guo, Xiaolu; Li, Qiong
收藏  |  浏览/下载：19/0  |  提交时间：2013/08/27
First-principles study of h-2 adsorption and dissociation on zr(0001) 期刊论文
Journal of nuclear materials, 2011, 卷号: 418, 期号: 1-3, 页码: 159-164
作者:  Zhang, Peng;  Wang, Shuang-Xi
收藏  |  浏览/下载：21/0  |  提交时间：2019/05/12
Dual-band quantum well infrared photodetectors with two ohmic contacts 期刊论文
Acta physica sinica, 2011, 卷号: 60, 期号: 9, 页码: 6
作者:  Huo Yong-Heng;  Ma Wen-Quan;  Zhang Yan-Hua;  Huang Jian-Liang;  Wei Yang
收藏  |  浏览/下载：21/0  |  提交时间：2019/05/12
The influence of the 1st aln and the 2nd gan layers on properties of algan/2nd aln/2nd gan/1st aln/1st gan structure 期刊论文
Applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
作者:  Bi, Yang;  Wang, XiaoLiang;  Yang, CuiBai;  Xiao, HongLing;  Wang, CuiMei
收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12
The influence of the ingan back-barrier on the properties of al0.3ga0.7n/aln/gan/ingan/gan structure 期刊论文
European physical journal-applied physics, 2011, 卷号: 55, 期号: 1, 页码: 5
作者:  Bi, Y.;  Wang, X. L.;  Xiao, H. L.;  Wang, C. M.;  Peng, E. C.
收藏  |  浏览/下载：25/0  |  提交时间：2019/05/12
Two-color in0.4ga0.6as/al0.1ga0.9as quantum dot infrared photodetector with double tunneling barriers 期刊论文
Applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: 3
作者:  Huang, Jianliang;  Ma, Wenquan;  Wei, Yang;  Zhang, Yanhua;  Huo, Yongheng
收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12

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