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科研机构
半导体研究所 [32]
内容类型
期刊论文 [31]
会议论文 [1]
发表日期
2011 [2]
2010 [5]
2007 [4]
2006 [4]
2003 [3]
2002 [2]
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学科主题
半导体材料 [14]
半导体物理 [10]
光电子学 [3]
微电子学 [2]
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Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:
Song HP
;
Wei HY
;
Li CM
;
Jiao CM
收藏
  |  
浏览/下载:66/4
  |  
提交时间:2011/07/05
CATHODOLUMINESCENCE CHARACTERIZATION
GALLIUM NITRIDE
STRESSES
LAYERS
HETEROSTRUCTURE
DEPOSITION
CONSTANTS
MECHANISM
SAPPHIRE
STRAIN
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD
期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42
作者:
Song HP
;
Shi K
;
Sang L
;
Wei HY
收藏
  |  
浏览/下载:58/3
  |  
提交时间:2011/07/05
Metal organic chemical vapor deposition
Sapphire
Zinc compounds
Semiconducting II-VI materials
VAPOR-PHASE EPITAXY
OPTICAL-PROPERTIES
ZNO NANORODS
RAMAN-SCATTERING
M-PLANE
FILMS
PHOTOLUMINESCENCE
DEPOSITION
NANOWIRES
FIELDS
Fermi-Level Pinning at Metal/High-k Interface Influenced by Electron State Density of Metal Gate
期刊论文
ieee electron device letters, 2010, 卷号: 31, 期号: 10, 页码: 1101-1103
Yang ZC (Yang Z. C.)
;
Huang AP (Huang A. P.)
;
Zheng XH (Zheng X. H.)
;
Xiao ZS (Xiao Z. S.)
;
Liu XY (Liu X. Y.)
;
Zhang XW (Zhang X. W.)
;
Chu PK (Chu Paul K.)
;
Wang WW (Wang W. W.)
收藏
  |  
浏览/下载:62/0
  |  
提交时间:2010/11/14
Electron state density
Fermi-level pinning (FLP)
MIS structures
work function (WF)
WORK FUNCTION
Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083112
Song YF (Song Yafeng)
;
Lu YW (Lu Yanwu)
;
Zhang BA (Zhang Biao)
;
Xu XQ (Xu Xiaoqing)
;
Wang J (Wang Jun)
;
Guo Y (Guo Yan)
;
Shi K (Shi Kai)
;
Li ZW (Li Zhiwei)
;
Liu XL (Liu Xianglin)
;
Yang SY (Yang Shaoyan)
;
Zhu QS (Zhu Qinsheng)
;
Wang ZG (Wang Zhanguo)
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  |  
浏览/下载:29/0
  |  
提交时间:2010/12/05
OPTICAL PHONON ENERGY
INVERSION-LAYERS
TRANSITIONS
RELAXATION
LASERS
STATES
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer
期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801
Wu YX (Wu Yu-Xin)
;
Zhu JJ (Zhu Jian-Jun)
;
Chen GF (Chen Gui-Feng)
;
Zhang SM (Zhang Shu-Ming)
;
Jiang DS (Jiang De-Sheng)
;
Liu ZS (Liu Zong-Shun)
;
Zhao DG (Zhao De-Gang)
;
Wang H (Wang Hui)
;
Wang YT (Wang Yu-Tian)
;
Yang H (Yang Hui)
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  |  
浏览/下载:128/4
  |  
提交时间:2010/04/13
GaN
Si (111) substrate
metalorganic chemical vapour deposition
AlN buffer layer
AlGaN interlayer
: VAPOR-PHASE EPITAXY
CRACK-FREE GAN
STRESS-CONTROL
SI(111)
DEPOSITION
ALXGA1-XN
FILM
Influence of nitrogen dose on the charge density of nitrogen-implanted buried oxide in SOI wafers
期刊论文
journal of semiconductors, 2010, 卷号: 31, 期号: 2, 页码: 99-102
Zheng Zhongshan
;
Liu Zhongli
;
Li Ning
;
Li Guohua
;
Zhang Enxia
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2011/08/16
Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111)
期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038103
Wang H (Wang Hui)
;
Liang H (Liang Hu)
;
Wang Y (Wang Yong)
;
Ng KW (Ng Kar-Wei)
;
Deng DM (Deng Dong-Mei)
;
Lau KM (Lau Kei-May)
收藏
  |  
浏览/下载:96/3
  |  
提交时间:2010/04/22
VAPOR-PHASE EPITAXY
TEMPERATURE ALN INTERLAYERS
CRACK-FREE GAN
STRESS-CONTROL
SI(111)
DEPOSITION
REDUCTION
THICKNESS
NITRIDE
LAYERS
Two opposite gradients of hole density in as-grown and annealed (ga,mn)as layers
期刊论文
Journal of magnetism and magnetic materials, 2007, 卷号: 308, 期号: 2, 页码: 313-317
作者:
Deng, J. J.
;
Zhao, J. H.
;
Tan, P. H.
;
Bi, J. F.
;
Gan, H. D.
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2019/05/12
Magnetic semiconductors
Electrical and magnetic properties (related to treatment conditions)
Raman spectra
Molecular-beam epitaxy
Effect of implantation of nitrogen into SIMOX buried oxide on its fixed positive charge density
期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 9, 页码: 5446-5451
Zheng, ZS (Zheng Zhong-Shan)
;
Zhang, EX (Zhang En-Xia)
;
Liu, ZL (Liu Zhong-Li)
;
Zhang, ZX (Zhang Zheng-Xuan)
;
Li, N (Li Ning)
;
Li, GH (Li Guo-Hua)
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2010/03/29
SIMOX
Two opposite gradients of hole density in as-grown and annealed (Ga,Mn)As layers
期刊论文
journal of magnetism and magnetic materials, 2007, 卷号: 308, 期号: 2, 页码: 313-317
作者:
Tan PH
;
Gan HD
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2010/04/11
magnetic semiconductors
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