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科研机构
武汉大学 [15]
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期刊论文 [15]
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2019 [4]
2018 [3]
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专题:武汉大学
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Interface Engineering via MoS2 Insertion Layer for Improving Resistive Switching of Conductive-Bridging Random Access Memory
期刊论文
ADVANCED ELECTRONIC MATERIALS, 2019, 卷号: 5, 期号: 4
作者:
Wu, Facai
;
Si, Shuyao
;
Cao, Peng
;
Wei, Wei
;
Zhao, Xiaolong
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2019/12/05
conductive-bridging random access memory
conductive filaments
electrochemical reactions
ion barriers
molybdenum disulfide
Light-controlled resistive switching and voltage-controlled photoresponse characteristics in the Pt/CeO2/Nb:SrTiO3 heterostructure
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 778
作者:
Xie, Shuai
;
Pei, Ling
;
Li, Meiya
;
Zhu, Yongdan
;
Cheng, Xiangyang
收藏
  |  
浏览/下载:42/0
  |  
提交时间:2019/12/05
Pt/CeO2/Nb
SrTiO3 heterostructure
Light-controlled resistive switching
Voltage-controlled photoresponse
Schottky barrier
Electrons trapping/detrapping
Multilevel memory
Uniform, Fast, and Reliable LixSiOy-Based Resistive Switching Memory
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 4
作者:
Zhao, Xiaolong
;
Zhang, Xumeng
;
Shang, Dashan
;
Wu, Zuheng
;
Xiao, Xiangheng
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2019/12/05
RRAM
resistive switching
lithium silicate
oxygen reservoir electrode
dual ion material
Interface Engineering via MoS2 Insertion Layer for Improving Resistive Switching of Conductive-Bridging Random Access Memory
期刊论文
Advanced Electronic Materials, 2019, 卷号: 5, 期号: 4
作者:
Wu, Facai
;
Si, Shuyao
;
Cao, Peng
;
Wei, Wei
;
Zhao, Xiaolong
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2019/12/05
Flexible cation-based threshold selector for resistive switching memory integration
期刊论文
SCIENCE CHINA-INFORMATION SCIENCES, 2018, 卷号: 61, 期号: 6
作者:
Zhao, Xiaolong
;
Wang, Rui
;
Xiao, Xiangheng
;
Lu, Congyan
;
Wu, Facai
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2019/12/05
cation-based threshold switching
resistive switching
flexible selector
conductive filament (CF)
1S1R
Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects
期刊论文
ADVANCED MATERIALS, 2018, 卷号: 30, 期号: 14
作者:
Zhao, Xiaolong
;
Ma, Jun
;
Xiao, Xiangheng
;
Liu, Qi
;
Shao, Lin
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2019/12/05
conductive filaments (CF)
defective graphene
ion barriers
resistive switching memory
threshold switching
Characteristics of the bipolar resistive switching behavior in memory device with Au/ZnO/ITO structure
期刊论文
CHINESE JOURNAL OF PHYSICS, 2018, 卷号: 56, 期号: 6
作者:
Wang, Hongjun
;
Zhu, Yuanyuan
;
Liu, Yong
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/05
ZnO
Resistive switching
Memory
Conducting filament
Coexistence of bipolar and unipolar resistive switching characteristics of thin TiO2film grown on Cu foil substrate for flexible nonvolatile memory device
期刊论文
Journal of Alloys and Compounds, 2017, 卷号: 695
作者:
Wang, Hongjun
;
Zhu, Yuanyuan
;
Fu, Dejun
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/12/05
Coexistence of bipolar and unipolar resistive switching characteristics of thin TiO2film grown on Cu foil substrate for flexible nonvolatile memory device
期刊论文
Journal of Alloys and Compounds, 2017, 卷号: 695
作者:
Zhu, Yuanyuan
;
Wang, Hongjun
;
Fu, Dejun
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/05
Coexistence of bipolar and unipolar resistive switching characteristics of thin TiO2 film grown on Cu foil substrate for flexible nonvolatile memory device
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 695
作者:
Wang, Hongjun
;
Zhu, Yuanyuan
;
Fu, Dejun
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/12/05
Resistive switching
TiO2
Memory device
Conducting filaments
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