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Cu gettering to nanovoids in SOI materials 期刊论文
SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2003, 卷号: 46, 期号: 1, 页码: 60-70
Zhang, M; Wu, YJ; Liu, WL; An, ZH; Lin, CL; Chu, PK
收藏  |  浏览/下载:10/0  |  提交时间:2012/03/24
Defect and strain in hydrogen and helium coimplanted single-crystal silicon 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2001, 卷号: 34, 期号: 1, 页码: 5-11
Duo, XZ; Liu, WL; Xing, S; Zhang, M; Fu, XR; Lin, CL; Hu, PG; Wang, SX; Wang, LM
收藏  |  浏览/下载:9/0  |  提交时间:2012/03/24
Comparison between the different implantation orders in H+ and He+ coimplantation 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2001, 卷号: 34, 期号: 4, 页码: 477-482
Duo, XZ; Liu, WL; Zhang, MA; Wang, LW; Lin, CL; Okuyama, M; Noda, M; Cheung, WY; Chu, PK; Hu, PG; Wang, SX; Wang, LM
收藏  |  浏览/下载:20/0  |  提交时间:2012/03/24
Evolution of hydrogen and helium co-implanted single-crystal silicon during annealing 期刊论文
JOURNAL OF APPLIED PHYSICS, 2001, 卷号: 90, 期号: 8, 页码: 3780-3786
Duo, XH; Liu, WL; Zhang, M; Wang, LW; Lin, CL; Okuyama, M; Noda, M; Cheung, WY; Wong, SP; Chu, PK; Hu, PG; Wang, SX; Wang, LM
收藏  |  浏览/下载:12/0  |  提交时间:2012/03/24
XTEM study of Ni gettering to H-implantation-induced nanocavities in SIMOX 期刊论文
2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS, 2000, 页码: 281-284
Zhang, M; Liu, WL; Duo, XZ; An, ZH; Lin, CL; Chu, PK; Scholz, R
收藏  |  浏览/下载:12/0  |  提交时间:2012/03/24
Gettering of Cu by microcavities in bonded/ion-cut silicon-on-insulator and separation by implantation of oxygen 期刊论文
JOURNAL OF APPLIED PHYSICS, 1999, 卷号: 86, 期号: 8, 页码: 4214-4219
Zhang, MO; Zeng, XC; Chu, PK; Scholz, R; Lin, CL
收藏  |  浏览/下载:6/0  |  提交时间:2012/03/25
Nanocavities: an effective gettering method for silicon-on-insulator wafers 期刊论文
CHINESE PHYSICS LETTERS, 1998, 卷号: 15, 期号: 7, 页码: 516-518
Zhang, M; Zeng, JM; Huang, JP; Lin, ZX; Zhou, ZY; Lin, CL
收藏  |  浏览/下载:30/0  |  提交时间:2012/03/25
Defects and voids in He+-implanted Si studied by slow-positron annihilation and transmission electron microscopy 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 卷号: 66, 期号: 5, 页码: 521-525
Zhang, M; Scholz, R; Weng, H; Lin, C
收藏  |  浏览/下载:11/0  |  提交时间:2012/03/25
Annealing behavior of crystalline Si implanted with high dose of protons 期刊论文
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1998, 卷号: 165, 期号: 2, 页码: 361-365
Zhang, M; Wang, LW; Zhou, ZY; Lin, ZX; Lin, CL
收藏  |  浏览/下载:13/0  |  提交时间:2012/03/25
Observation of DC currents induced in MOS capacitors during NBTS aging 期刊论文
MICROELECTRONICS RELIABILITY, 1997, 卷号: 37, 期号: 1, 页码: 171-177
Lu, DR; Li, BQ
收藏  |  浏览/下载:9/0  |  提交时间:2012/03/25


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