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| Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory 期刊论文 Chinese physics B, 2018 作者: Bi JS(毕津顺); Xi K(习凯); Li B(李博); Wang HB(王海滨); Ji LL(季兰龙) 收藏  |  浏览/下载:24/0  |  提交时间:2019/04/12 |
| Performance Enhancement of Metal Floating Gate Memory By Using a Bandgap Engineered High-k Tunneling Barrier 会议论文 作者: Huo ZL(霍宗亮); Tang ZY(唐兆云); Zhang Y(张瑜); Zou XQ(邹兴奇); Chen GX(陈国星) 收藏  |  浏览/下载:15/0  |  提交时间:2017/05/12 |
| A Novel IGBT Structure With Floating N-Doped Buried Layer in P-base to Suppress Latch-Up 期刊论文 IEEE Electron Device Letters, 2016 作者: Tian XL(田晓丽); Lu SJ(卢烁今); Teng Y(腾渊); Shen QX(沈千行); Zhang GY(张广银) 收藏  |  浏览/下载:11/0  |  提交时间:2017/05/11 |
| Investigation of tunneling layer and inter-gate-dielectric engineered TaN floating gate memory 期刊论文 Integrated Ferroelectrics, 2016 作者: 存储器研发中心; Huo ZL(霍宗亮); Fu LY(付丽银); Jin L(靳磊); Jiang DD(姜丹丹) 收藏  |  浏览/下载:11/0  |  提交时间:2017/04/14 |
| 半导体存储单元、器件及其制备方法 专利 专利号: US8927963, 申请日期: 2015-01-06, 公开日期: 2012-03-18 作者: 霍宗亮; 刘明 收藏  |  浏览/下载:9/0  |  提交时间:2017/05/24 |
| A 65nm 1Gb NOR Floating-gate Flash Memory with Less than 50ns Access time 期刊论文 Chinese Science bulletin, 2014, 期号: 29, 页码: 3935-3942 作者: Liu M(刘明); Wang Y(王瑜); Huo ZL(霍宗亮) 收藏  |  浏览/下载:13/0  |  提交时间:2015/04/13 |
| Metal Floating Gate Memory Device with SiO2/HfO2 Dual-layer as Engineered Tunneling Barrier 期刊论文 Electron Device Letters, 2014 作者: Han YL(韩宇龙); Chen GX(陈国星); Huo ZL(霍宗亮); Jin L(靳磊); Li XK(李新开) 收藏  |  浏览/下载:11/0  |  提交时间:2015/04/15 |
| Isolated nanographene crystals for nano-floating gate in charge trapping memory 期刊论文 Scientific Reports, 2013 作者: Liu M(刘明); Huo ZL(霍宗亮) 收藏  |  浏览/下载:6/0  |  提交时间:2014/10/22 |
| A metal/Al2O3/ZrO2/SiO2/Si (MAZOS) structure for high-performance non-volatile memory application 外文期刊 2010 作者: Zhang, MH; Liu, M; Long, SB; Wang, Q; Liu, J 收藏  |  浏览/下载:14/0  |  提交时间:2010/11/26
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