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长春光学精密机械与物... [6]
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会议论文 [3]
学位论文 [2]
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2015 [2]
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ZnO与SnO2透明导体/半导体薄膜的研究
学位论文
博士: 中国科学院大学, 2015
作者:
吴绍航
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  |  
浏览/下载:183/0
  |  
提交时间:2015/11/30
透明氧化物
透明电子
宽禁带
薄膜
场效应薄膜晶体管
电子束热蒸发
磁控溅射
Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors
期刊论文
Chinese Physics B, 2015, 卷号: 24, 期号: 10, 页码: 5
作者:
Wu, S. H.
;
N. Zhang
;
Y. S. Hu
;
H. Chen
;
D. P. Jiang and X. Y. Liu
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  |  
浏览/下载:18/0
  |  
提交时间:2016/07/15
Fabrication of ZnO thin film transistors based on the substrate of glass (EI CONFERENCE)
会议论文
2009 International Symposium on Liquid Crystal Science and Technology, August 2, 2009 - August 5, 2009, Kunming, China
Yang X.
;
Wang C.
;
Zhao C.
;
Tang W.
;
Gao X.
;
Yang J.
;
Liu B.
;
Qi X.
;
Du G.
;
Cao J.
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  |  
浏览/下载:23/0
  |  
提交时间:2013/03/25
Abstract. In our paper
we induced the process of ZnO based thin film transistors (ZnO-TFTs) fabricated on the substrate of glass. The photolithographic plate designed for using in the ZnO-TFT devices fabrication process was shown in our paper. The ZnO-TFT devices were fabricated successfully
the Ion/off ratio is 104. (2010) Trans Tech Publications.
ZnO薄膜及ZnO基薄膜晶体管的研究
学位论文
博士, 长春光学精密机械与物理所: 中国科学院长春光学精密机械与物理所, 2009
马仙梅
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  |  
浏览/下载:19/0
  |  
提交时间:2012/03/21
ZnO
薄膜晶体管
溅射
玻璃
透明
Study of the fabrication of ZnO-TFT (EI CONFERENCE)
会议论文
Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China
Wang C.
;
Yang X. T.
;
Zhu H. C.
;
Ma X. M.
;
Fu G. Z.
;
Jing H.
;
Chang Y. C.
;
Du G. T.
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  |  
浏览/下载:18/0
  |  
提交时间:2013/03/25
Znic Oxide (ZnO) as a shorter wavelength luminescent material concerning its outstanding properties of a wide band-gap semiconductor
it can be used as the active channel layer to fabricate thin film transistor (TFT) and transparent thin film transistor(TTFT). In this paper
we introduced ZnO-TFT using different substrate material
insulator material
electrode material of gate
source and drain in its device.
The fabrication and study of ZnO-based thin film transistors (EI CONFERENCE)
会议论文
Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China
Yang X. T.
;
Ma X. M.
;
Zhu H. C.
;
Gao W. T.
;
Jin H.
;
Qi X. W.
;
Gao B.
;
Dong X. R.
;
Fu G. Z.
;
Jing H.
;
Wang C.
;
Chang Y. C.
;
Du G. T.
;
Cao J. L.
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  |  
浏览/下载:14/0
  |  
提交时间:2013/03/25
Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO-TF-TS) have been constructed. The ZnO layers were deposited using metal organic chemical vapor deposition (MOCVD)[1-3] at about 360C. SiO2 was used as the material of gate insulator to suppress the leakage current effectively and to enable the ZnO-TFT to operate successfully. The drain current on-to-off ratio of ZnO-TFTs fabricated on the substrate of glass is about 104. The average optical transmission of ZnO-TFTs in the visible portion is 80%. All above shows that it is possible to fabricate a transparent TFT using ZnO as an active channel layer instead of the traditional Si material.
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