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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 专题：北京航空航天大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Redesigning pipeline when architecting STT-RAM as registers in rad-hard environment 期刊论文 SUSTAINABLE COMPUTING-INFORMATICS & SYSTEMS, 2019, 卷号: 22, 页码: 206-218 作者:  Gong, Zhiyao;  Qiu, Keni;  Chen, Weiwen;  Ni, Yuanhui;  Xu, Yuanchao 收藏  |  浏览/下载：22/0  |  提交时间：2019/12/30 Electromagnetic waves  Embedded systems  Merging  Pipelines  Radiation hardening  Static random access storage  Data dependencies  Emerging non-volatile memory  High radiation resistance  Micro architectures  Nonvolatility  Single event  Single event upsets  Spin transfer torque  Radiation effects   Write energy optimization for STT-MRAM cache with data pattern characterization 会议论文 2018 IEEE COMPUTER SOCIETY ANNUAL SYMPOSIUM ON VLSI (ISVLSI), 2018-01-01 作者:  Xu, Bi;  Zhang, Xiaolong;  Cheng, Yuanqing;  Wang, Zhaohao;  Liu, Dijun 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/30 Big data  Cache memory  Dynamic random access storage  Magnetic recording  Magnetic storage  Static random access storage  VLSI circuits  Cache  Data patterns  Low Power  STT-MRAM  Write energy  MRAM devices   Exploring potentials of NAND-like spintronics MRAM for cache design (Invited) 会议论文 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings 作者:  Wu, B.;  Zhang, B.;  Xu, Y.;  Wang, Z.;  Liu, D. 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/30 Budget control  Cache memory  Efficiency  Integrated circuit design  Magnetic recording  Magnetic storage  NAND circuits  Static random access storage  Cache capacity  Integration density  Leakage power  Magnetic random access memory  Operation speed  Power efficiency  Runtime systems  Spin transfer torque  MRAM devices   PRESCOTT: Preset-based cross-point architecture for spin-orbit-torque magnetic random access memory 会议论文 IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD 作者:  Chang, L.;  Wang, Z.;  Glova, A.O.;  Zhao, J.;  Zhang, Y. 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/30 Circuit simulation  Computer aided design  Digital storage  Dynamic random access storage  Energy dissipation  Integrated circuit design  Magnetic recording  Magnetic storage  Memory architecture  Random access storage  Semiconductor storage  Static random access storage  Torque  Control complexity  Cross point  Leakage power consumption  Magnetic random access memory  Memory cell  MRAM  Spin orbits  Spin transfer torque  MRAM devices   A four-interleaving HBD SRAM cell based on dual DICE for multiple node collection mitigation 期刊论文 Journal of Semiconductors, 2015, 卷号: 36 作者:  Liu, L.;  Yue, S.;  Lu, S. 收藏  |  浏览/下载：19/0  |  提交时间：2019/12/30 Nanotechnology  Radiation hardening  65-nm technologies  CMOS test chip  Hardened-by-design  Multi-nodes  Orders of magnitude  Radiation experiment  SEU cross-section  Single event upsets  Static random access storage