CORC

在结果中检索

CORC

浏览/检索结果: 共9条，第1-9条 帮助

限定条件                
已选(0)清除 条数/页：   排序方式：
MBE growth of high absorption mid-IR type-II InAs/GaSb superlattices 期刊论文
CHINESE SCIENCE BULLETIN, 2014, 卷号: 59, 期号: 20, 页码: 2383
Wang, G; Wang, L; Chen, H; Wang, WX; Shi, ZW; Chen, YL; He, M; Lu, PY; Qian, WN
收藏  |  浏览/下载：31/0  |  提交时间：2015/04/14
Effect of the GaAs/GaSb combination strain-buffer layer on self-assembled InAs quantum dots 期刊论文
ACTA PHYSICA SINICA, 2009, 卷号: 58, 期号: 1, 页码: 471
Jiang, ZW; Wang, WX; Gao, HC; Li, H; He, T; Yang, CL; Chen, H; Zhou, JM
收藏  |  浏览/下载：9/0  |  提交时间：2013/09/17
Effect of GaAs/GaSb combination strain-reducing layer on self-assembled InAs quantum dots 期刊论文
CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 7, 页码: 2649
Jiang, ZW; Wang, WX; Gao, HC; Li, H; Yang, CL; He, T; Wu, DZ; Chen, H; Zhou, JM
收藏  |  浏览/下载：15/0  |  提交时间：2013/09/17
Buffer influence on AlSb/InAs/AlSb quantum wells 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 301, 页码: 181
Li, ZH; Wang, WX; Liu, LS; Gao, HC; Jiang, ZW; Zhou, JM; Chen, H
收藏  |  浏览/下载：24/0  |  提交时间：2013/09/17
Electronic structure of RbCl and Rb2ZnCl4 in the solid and the liquid state: Analysis of the local fine structure of X-ray absorption 期刊论文
PHYSICS OF THE SOLID STATE, 2001, 卷号: 43, 期号: 1, 页码: 19
Soldatov, AV; Shtekhin, IE; Li, C; Lu, K; Li, H
收藏  |  浏览/下载：10/0  |  提交时间：2013/09/17
Scanning tunneling microscopy of III-V compound semiconductor (001) surfaces 期刊论文
PROGRESS IN SURFACE SCIENCE, 1997, 卷号: 56, 期号: 1-2, 页码: 1
Xue, QK; Hashizume, T; Sakurai, T
收藏  |  浏览/下载：8/0  |  提交时间：2013/09/24
(II-VI)(m)/(IV2)(n) (110) superlattice: Interfacial chemistry, electronic structure, and optical property 期刊论文
APPLIED SURFACE SCIENCE, 1996, 卷号: 104, 页码: 626
Wang, EG
收藏  |  浏览/下载：7/0  |  提交时间：2013/09/17
GE-ZNSE  GAAS  GAP  STATES  FILMS  INAS  GASB  SI  
TIGHT-BINDING CALCULATION OF ZNSE/GE SUPERLATTICES - ELECTRONIC-STRUCTURE AND OPTICAL PROPERTY 期刊论文
JOURNAL OF APPLIED PHYSICS, 1995, 卷号: 78, 期号: 3, 页码: 1832
WANG, EG; CHEN, CF; TING, CS
收藏  |  浏览/下载：14/0  |  提交时间：2013/09/23
GE-ZNSE  GAAS  GAP  SI  SEMICONDUCTORS  INAS  GASB  
INTERVALLEY GAMMA-X DEFORMATION POTENTIALS FOR TOP VALENCE BANDS IN III-V ZINCBLENDE SEMICONDUCTORS BY ABINITIO PSEUDOPOTENTIAL CALCULATIONS 期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 卷号: 5, 期号: 6, 页码: 647
WANG, JQ; GU, BY
收藏  |  浏览/下载：10/0  |  提交时间：2013/09/18

©版权所有 ©2017 CSpace - Powered by CSpace