×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
西安交通大学 [11]
内容类型
会议论文 [7]
期刊论文 [4]
发表日期
2019 [1]
2018 [4]
2017 [2]
2016 [4]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共11条,第1-10条
帮助
限定条件
专题:西安交通大学
第一署名单位
第一作者单位
通讯作者单位
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
A Single Gate Driver Based Solid-State Circuit Breaker Using Series Connected SiC MOSFETs
期刊论文
IEEE Transactions on Power Electronics, 2019, 卷号: 34, 页码: 2002-2006
作者:
Ren, Yu
;
Yang, Xu
;
Zhang, Fan
;
Wang, Fei
;
Tolbert, Leon M.
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2019/11/19
Gate drivers
Integrated circuit reliability
MOS-FET
Series connections
SiC MOSFET
Solid State Circuit Breaker
Voltage balancing
Wide band gap devices
Temperature Dependence of Dynamic Performance Characterization of 1.2 kV SiC Power MOSFETs compared with Si IGBTs for Wide Temperature Applications
期刊论文
IEEE Transactions on Power Electronics, 2018
作者:
Qi, Jinwei
;
Yang, Xu
;
Li, Xin
;
Tian, Kai
;
Mao, Zhangsong
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2019/11/19
Cryogenic temperatures
Dynamic resistance
High-efficiency power conversions
High-frequency applications
Power conversion systems
SiC MOSFET
Switching characterization
Temperature applications
Characterization of 1.2 kV 4H-SiC power MOSFETs and Si IGBTs at cryogenic and high temperatures
会议论文
作者:
Tian, Kai
;
Qi, Jinwei
;
Mao, Zhangsong
;
Yang, Song
;
Song, Wenjie
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/11/19
Cryogenic temperatures
High temperature
Interface traps
Switching characteristics
Switching performance
Transfer characteristics
Trench mosfets
Wide temperature ranges
Dynamic Performance of 4H-SiC Power MOSFETs and Si IGBTs over Wide Temperature Range
会议论文
作者:
Qi, Jinwei
;
Tian, Kai
;
Mao, Zhangsong
;
Yang, Song
;
Song, Wenjie
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/11/26
MOSFETs
dynamic on-resistance
silicon carbide (SiC)
cryogenic temperature
switching transient
Research on a 4000-V-Ultrahigh Input-Switched-Mode Power Supply Using Series-Connected MOSFETs
期刊论文
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2018, 卷号: 33, 页码: 5995-6011
作者:
Chen, Xiliang
;
Chen, Wenjie
;
Yang, Xu
;
Han, Yaqiang
;
Hao, Xiang
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/11/26
ultrahigh input
Common-mode (CM) interference
voltage balance
series connected
A Novel Solid-state DC-breaker based on Cascaded SiC MOSFETs
会议论文
作者:
Ren, Yu
;
Yang, Xu
;
Qiao, Liang
;
Zhang, Fan
;
Wang, Laili
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/11/26
voltage distribution
solid-state DC-breaker
gate driver
SiC MOSFET
A Simplified Cascading Hybrid Power and Its Control Scheme for Electric Vehicles
期刊论文
Qiche Gongcheng/Automotive Engineering, 2017, 卷号: 39, 页码: 1368-1374
作者:
Xu, Dan
;
Zhou, Huan
;
Wang, Bin
;
Cao, Binggang
;
Wang, Jianlin
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/11/26
Cascading configuration
Control schemes
Energy recovery
Hybrid power
MOSFETs
Operation mode
Analysis of series SiC MOSFETs stack using a single standard gate driver
会议论文
作者:
Ren, Yu
;
Yang, Xu
;
Zhang, Fan
;
Chen, Wenjie
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/02
voltage distribution
series connection
gate driver
SiC MOSFET
Common-mode Interference Study of a Auxiliary Power Supply Based on the Serialization of SiC MOSFETs for MMC-HVDC System
会议论文
作者:
Chen, Xiliang
;
Chen, Wenjie
;
Han, Yaqiang
;
Sha, Yilin
;
Yang, Xu
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/02
serialization of MOSFETs
APS
MMC-HVDC
CM interference
ultra-high voltage
A novel gate control strategy for 3.4kV cascade SiC MOSFETs stack
会议论文
作者:
Ren, Yu
;
Yang, Xu
;
Zhang, Fan
;
Qiao, Liang
;
Wang, Yichen
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/11/26
DC/DC
Silicon Carbide (SiC)
Control of drive
©版权所有 ©2017 CSpace - Powered by
CSpace