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科研机构
西安交通大学 [122]
内容类型
期刊论文 [99]
会议论文 [19]
学位论文 [3]
其他 [1]
发表日期
2019 [6]
2018 [27]
2017 [28]
2016 [23]
2015 [11]
2014 [5]
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专题:西安交通大学
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The Design and Analysis of a Novel Micro Force Sensor Based on Depletion Type Movable Gate Field Effect Transistor
期刊论文
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2019, 卷号: 28, 页码: 298-310
作者:
Gao, Wendi
;
Jia, Chen
;
Jiang, Zhuangde
;
Zhou, Xiangyang
;
Zhao, Libo
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/11/19
Ultra-low force sensor
movable gate
depletion type
high measuring sensitivity
field effect transistor
Lateral Graphene p–n Junctions Realized by Nanoscale Bipolar Doping Using Surface Electric Dipoles and Self-Organized Molecular Anions
期刊论文
Advanced Materials Interfaces, 2019, 卷号: 6
作者:
Zhang, Yong
;
Hu, Guangliang
;
Gong, Maogang
;
Alamri, Mohammed
;
Ma, Chunrui
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2019/11/19
BMP-TFSI ionic liquid
graphene field effect transistor
lateral p&ndash
n junctions
oxide ferroelectric
surface electric dipoles
Photoinduced Hysteresis of Graphene Field-Effect Transistors Due to Hydrogen-Complexed Defects in Silicon Dioxide
期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2019, 卷号: 11, 页码: 12170-12178
作者:
Cao, Guiming
;
Liu, Xiaorong
;
Zhang, Yantao
;
Liu, Weihua
;
Deng, Minming
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/11/19
proton-hopping
silicon dioxide
graphene
photoelectric field-induced doping
field effect transistor
Controlling the Dirac point voltage of graphene by mechanically bending the ferroelectric gate of a graphene field effect transistor
期刊论文
MATERIALS HORIZONS, 2019, 卷号: 6, 页码: 302-310
作者:
Hu, Guangliang
;
Wu, Jingying
;
Ma, Chunrui
;
Liang, Zhongshuai
;
Liu, Weihua
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2019/11/19
Hydrogen-terminated diamond field-effect transistor with AlOx dielectric layer formed by autoxidation
期刊论文
SCIENTIFIC REPORTS, 2019, 卷号: 9
作者:
Wang, Yan-Feng
;
Wang, Wei
;
Chang, Xiaohui
;
Zhang, Xiaofan
;
Fu, Jiao
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2019/11/19
Sensitivity enhancement of potassium ion (K+) detection based on graphene field-effect transistors with surface plasma pretreatment
期刊论文
SENSORS AND ACTUATORS B-CHEMICAL, 2019, 卷号: 285, 页码: 333-340
作者:
Yuan, Qilong
;
Wu, Sudong
;
Ye, Chen
;
Liu, Xiangqi
;
Gao, Jingyao
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2019/11/19
G-quadruplex
Solution-gated field effect transistor (FET)
CVD grapheme
Oxygen (O-2) plasma treatment
Potassium ion (K+) detection
Scheme of an optical transistor based on phase modulation
期刊论文
LASER PHYSICS, 2018, 卷号: 28
作者:
Yang, Jiawei
;
Wang, Zhiguo
;
Sun, Yanyong
;
Zhang, Yanpeng
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2019/11/19
coherent optical effects
phase modulation
four-wave mixing
optical transistor
Experimental studies of collector-emitter voltage bias influence on the total ionization dose effects in NPN Si BJTs
期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 122, 页码: 194-202
作者:
Lawal, Olarewaju Mubashiru
;
Liu, Shuhuan
;
Li, Zhuoqi
;
Yang, JiangKun
;
Hussain, Aqil
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2019/11/19
Total ionization dose effects
Excess base current
Ideality factor
Collector-emitter voltage bias conditions
Power dissipation
Bipolar junction transistor
Study of high breakdown voltage GaN-based current-aperture vertical electron transistor with source-connected field-plates for power applications
期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 卷号: 33
作者:
Wang, Haiyong
;
Mao, Wei
;
Cong, Guanyu
;
Wang, Xiaofei
;
Du, Ming
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/11/19
source-connected field-plates
breakdown voltage
specific on-resistance
GaN-based CAVET
power device
Paralleled GaN DHEMTs integrated cascode GaN switch for high-current applications
期刊论文
ELECTRONICS LETTERS, 2018, 卷号: 54, 页码: 899-900
作者:
Zhu, Tianhua
;
Zhuo, Fang
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2019/11/19
high-current applications
wire bonding
power density
avalanche-suppressed method
gallium compounds
GaN
integral package
lead bonding
single gate driver
field effect transistor switches
MOSFET
DHEMT integrated cascode switch
high electron mobility transistors
paralleled depletion-mode high-electron-mobility transistors
wide band gap semiconductors
cascode transistors
silicon-MOSFET
Si
potential unbalanced current sharing
cost reduction
optimised symmetric configuration
high-current cascode gallium nitride switch
III-V semiconductors
semiconductor device packaging
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