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The Design and Analysis of a Novel Micro Force Sensor Based on Depletion Type Movable Gate Field Effect Transistor 期刊论文
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2019, 卷号: 28, 页码: 298-310
作者:  Gao, Wendi;  Jia, Chen;  Jiang, Zhuangde;  Zhou, Xiangyang;  Zhao, Libo
收藏  |  浏览/下载:8/0  |  提交时间:2019/11/19
Lateral Graphene p–n Junctions Realized by Nanoscale Bipolar Doping Using Surface Electric Dipoles and Self-Organized Molecular Anions 期刊论文
Advanced Materials Interfaces, 2019, 卷号: 6
作者:  Zhang, Yong;  Hu, Guangliang;  Gong, Maogang;  Alamri, Mohammed;  Ma, Chunrui
收藏  |  浏览/下载:19/0  |  提交时间:2019/11/19
Photoinduced Hysteresis of Graphene Field-Effect Transistors Due to Hydrogen-Complexed Defects in Silicon Dioxide 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2019, 卷号: 11, 页码: 12170-12178
作者:  Cao, Guiming;  Liu, Xiaorong;  Zhang, Yantao;  Liu, Weihua;  Deng, Minming
收藏  |  浏览/下载:13/0  |  提交时间:2019/11/19
Controlling the Dirac point voltage of graphene by mechanically bending the ferroelectric gate of a graphene field effect transistor 期刊论文
MATERIALS HORIZONS, 2019, 卷号: 6, 页码: 302-310
作者:  Hu, Guangliang;  Wu, Jingying;  Ma, Chunrui;  Liang, Zhongshuai;  Liu, Weihua
收藏  |  浏览/下载:17/0  |  提交时间:2019/11/19
Hydrogen-terminated diamond field-effect transistor with AlOx dielectric layer formed by autoxidation 期刊论文
SCIENTIFIC REPORTS, 2019, 卷号: 9
作者:  Wang, Yan-Feng;  Wang, Wei;  Chang, Xiaohui;  Zhang, Xiaofan;  Fu, Jiao
收藏  |  浏览/下载:21/0  |  提交时间:2019/11/19
Sensitivity enhancement of potassium ion (K+) detection based on graphene field-effect transistors with surface plasma pretreatment 期刊论文
SENSORS AND ACTUATORS B-CHEMICAL, 2019, 卷号: 285, 页码: 333-340
作者:  Yuan, Qilong;  Wu, Sudong;  Ye, Chen;  Liu, Xiangqi;  Gao, Jingyao
收藏  |  浏览/下载:34/0  |  提交时间:2019/11/19
Scheme of an optical transistor based on phase modulation 期刊论文
LASER PHYSICS, 2018, 卷号: 28
作者:  Yang, Jiawei;  Wang, Zhiguo;  Sun, Yanyong;  Zhang, Yanpeng
收藏  |  浏览/下载:15/0  |  提交时间:2019/11/19
Experimental studies of collector-emitter voltage bias influence on the total ionization dose effects in NPN Si BJTs 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 122, 页码: 194-202
作者:  Lawal, Olarewaju Mubashiru;  Liu, Shuhuan;  Li, Zhuoqi;  Yang, JiangKun;  Hussain, Aqil
收藏  |  浏览/下载:18/0  |  提交时间:2019/11/19
Study of high breakdown voltage GaN-based current-aperture vertical electron transistor with source-connected field-plates for power applications 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 卷号: 33
作者:  Wang, Haiyong;  Mao, Wei;  Cong, Guanyu;  Wang, Xiaofei;  Du, Ming
收藏  |  浏览/下载:2/0  |  提交时间:2019/11/19
Paralleled GaN DHEMTs integrated cascode GaN switch for high-current applications 期刊论文
ELECTRONICS LETTERS, 2018, 卷号: 54, 页码: 899-900
作者:  Zhu, Tianhua;  Zhuo, Fang
收藏  |  浏览/下载:16/0  |  提交时间:2019/11/19


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