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兰州理工大学 [42]

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期刊论文 [38]

会议论文 [4]

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限定条件	专题：兰州理工大学第一署名单位第一作者单位通讯作者单位

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	First-principles Study of Doped (Silicon, Germanium, Tin) Single-wall Carbon Nanotubes 期刊论文 Cailiao Daobao/Materials Reports, 2022, 卷号: 36, 期号: 9 作者: Lu, Xuefeng; Wang, Kuan; Cui, Zhihong 收藏 \| 浏览/下载：31/0 \| 提交时间：2022/06/20 Absorption spectroscopy Atoms Calculations Semiconductor doping Single-walled carbon nanotubes (SWCN) Solar cells Doped silicon Doped systems Electronic.structure First principles First-principle study Germanium tins Silicon germaniums (SiGe) Single Wall Single-wall carbon nanotube Sn-doped
	Construction of 3D sponge-like hierarchical pore Ag10Si4O13 microblock photocatalyst with enhanced photocatalytic activities 期刊论文 COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS, 2022, 卷号: 633 作者: Li, Cuixia; Kong, Wenhui; Jin, Haize; Kang, Weichao; Li, Wensheng 收藏 \| 浏览/下载：25/0 \| 提交时间：2022/03/01 Nano-Ag10Si4O13 Polystyrene microsphere 3D hierarchical pore Sol-gel method Photocatalysis Visible-light
	Structure stability, electronic property and voltage profile of LiFe1−nNnP1−mM mO4 olivine cathode material 期刊论文 Rare Metals, 2021, 卷号: 40, 期号: 12, 页码: 3512-3519 作者: Cui, Zhi-Hong; Lu, Xue-Feng; Luo, Jian-Hua; Guo, Xin; Xue, Hong-Tao 收藏 \| 浏览/下载：20/0 \| 提交时间：2022/02/17 Cathodes Computation theory Density functional theory Electronic properties Energy gap Silicate minerals Silicon Stability Charge density difference Computational studies Electrode material Lithium Intercalation N-type semiconductors P type semiconductor Structural stabilities Structure stability
	First-Principles Calculations of Electronic Structure and Optical Properties of Si-Doped and Vacancy beta-Ga2O3 期刊论文 CRYSTAL RESEARCH AND TECHNOLOGY, 2021, 卷号: 57, 期号: 1 作者: Liu, Jifei; Gao, Shanshan; Li, Weixue; Dai, Jianfeng; Suo, Zhongqiang 收藏 \| 浏览/下载：7/0 \| 提交时间：2021/12/17 beta-Ga2O3 effective mass electronic structure generalized gradient approximation Hubbard term optical properties
	Effect of microstructure and mechanical properties on the tribological and electrochemical performances of Si/DLC films under HCl corrosive environment 期刊论文 DIAMOND AND RELATED MATERIALS, 2021, 卷号: 116 作者: Shang, Lunlin; Gou, Chengxue; Li, Wensheng; He, Dongqing; Wang, Shunhua 收藏 \| 浏览/下载：7/0 \| 提交时间：2021/10/14 Si DLC films Si concentration HCl solution Tribological performance Electrochemical performance
	First-Principles Study of Electronic Properties of SnO2/CsPbI2Br Interface 期刊论文 JOURNAL OF ELECTRONIC MATERIALS, 2021, 卷号: 50, 期号: 4, 页码: - 作者: Hu, Wei; An, Junpeng; Si, Fengjuan; Xue, Hongtao; Tang, Fuling 收藏 \| 浏览/下载：7/0 \| 提交时间：2021/03/12 Binding energy Bromine compounds Calculations Chemical bonds Density functional theory Electronic properties Lattice mismatch Lattice theory Lead compounds Perovskite Perovskite solar cells Semiconductor quantum wells Doping modification First-principles calculation First-principles study Heterogeneous interfaces Interface control Interface orientation Microscopic properties Theoretical research
	Structure stability, electronic property and voltage profile of LiFe(1-n)NnP(1-m)M(m)O(4) olivine cathode material 期刊论文 RARE METALS, 2021, 卷号: 40, 期号: 12, 页码: 3512-3519 作者: Cui, Zhi-Hong; Lu, Xue-Feng; Luo, Jian-Hua; Guo, Xin; Xue, Hong-Tao 收藏 \| 浏览/下载：2/0 \| 提交时间：2021/06/03 Energy storage materials First principles Battery cathode LiFePO4 Doping Electronic properties
	Modification of a-C:H films via nitrogen and silicon doping: The way to the superlubricity in moisture atmosphere 期刊论文 Diamond and Related Materials, 2020, 卷号: 107 作者: Wang, Kai; Yang, Baoping; Zhang, Bin; Bai, Changning; Mou, Zhixing 收藏 \| 浏览/下载：6/0 \| 提交时间：2020/11/14 Carbon films Chemical bonds Chromium compounds Dangling bonds Debris Friction Hematite Moisture Nitrogen Plasma CVD Plasma enhanced chemical vapor deposition Semiconductor doping Silicon compounds Wear of materials Element distribution Friction force Hydrogenated carbon films Open atmosphere Plasma enhanced chemical vapor depositions (PE CVD) Si (100) substrate Silicon doping Sliding conditions
	Modification of a-C:H films via nitrogen and silicon doping: The way to the superlubricity in moisture atmosphere 会议论文作者: Wang, Kai; Yang, Baoping; Zhang, Bin; Bai, Changning; Mou, Zhixing 收藏 \| 浏览/下载：6/0 \| 提交时间：2020/12/18 Carbon films Chemical bonds Chromium compounds Dangling bonds Debris Friction Hematite Moisture Nitrogen Plasma CVD Plasma enhanced chemical vapor deposition Semiconductor doping Silicon compounds Wear of materialsElement distribution Friction force Hydrogenated carbon films Open atmosphere Plasma enhanced chemical vapor depositions (PE CVD) Si (100) substrate Silicon doping Sliding conditions
	Modification of a-C:H films via nitrogen and silicon doping: The way to the superlubricity in moisture atmosphere 期刊论文 Diamond and Related Materials, 2020, 卷号: 107 作者: Wang, Kai; Yang, Baoping; Zhang, Bin; Bai, Changning; Mou, Zhixing 收藏 \| 浏览/下载：9/0 \| 提交时间：2022/02/17 Carbon films Chemical bonds Chromium compounds Dangling bonds Debris Friction Hematite Moisture Nitrogen Plasma CVD Plasma enhanced chemical vapor deposition Semiconductor doping Silicon compounds Wear of materials Element distribution Friction force Hydrogenated carbon films Open atmosphere Plasma enhanced chemical vapor depositions (PE CVD) Si (100) substrate Silicon doping Sliding conditions

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