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期刊论文 [178]
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A class of finite element methods with averaging techniques for solving the three-dimensional drift-diffusion model in semiconductor device simulations
期刊论文
JOURNAL OF COMPUTATIONAL PHYSICS, 2022, 卷号: 458, 页码: 24
作者:
Zhang, Qianru
;
Wang, Qin
;
Zhang, Linbo
;
Lu, Benzhuo
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2023/02/07
Three-dimensional drift -diffusion model
Averaging technique
Finite element method
Semiconductor device
A 2.5 ppm/degrees C Voltage Reference Combining Traditional BGR and ZTC MOSFET High-Order Curvature Compensation
期刊论文
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2021, 卷号: 68, 期号: 4, 页码: 1093-1097
作者:
Liu, Xifeng
;
Liang, Shan
;
Liu, Wenju
;
Sun, Ping
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2021/05/17
Voltage reference
ZTC
curvature compensation
a power model
CMOS process
PSRR
Effect of charge coupling on breakdown voltage of high voltage trench-gate-type super barrier rectifier
期刊论文
ACTA PHYSICA SINICA, 2021, 卷号: 70
作者:
Xu Da-Lin
;
Wang Yu-Qi
;
Li Xin-Hua
;
Shi Tong-Fei
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2021/04/26
trench-gate-type super barrier rectifier
charge coupling
breakdown voltage
stepped oxide
A MOSFET-based high voltage nanosecond pulse module for the gating of proximity-focused microchannel plate image-intensifier
期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2021, 卷号: 987
作者:
Fang, Yuman
;
Gou, Yongsheng
;
Zhang, Minrui
;
Wang, Junfeng
;
Tian, Jinshou
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2021/01/28
Image intensifier
ICCD camera
MOSFET switching
Ultrafast imaging
Nanosecond pulse generation
Single-event induced failure mode of PWM in DC/DC converter
期刊论文
MICROELECTRONICS RELIABILITY, 2020, 卷号: 114, 页码: 6
作者:
Gao, J.
;
Li, C.
;
Li, B.
;
Li, B.
;
Zhao, F.
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2021/12/13
Modeling of a Smart Nano Force Sensor Using Finite Elements and Neural Networks
期刊论文
International Journal of Automation and Computing, 2020, 卷号: 17, 期号: 2, 页码: 279-291
作者:
Farid Menacer
;
Abdelmalek Kadr
;
Zohir Dibi
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2021/02/22
Nano force
sensor
carbon nanotube (CNT)
finite elements
neural network.
Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET
期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 559-566
作者:
Liang, XW (Liang, Xiaowen)[ 1,2,3 ]
;
Cui, JW (Cui, Jiangwei)[ 1,2 ]
;
Zheng, QW (Zheng, Qiwen)[ 1,2 ]
;
Zhao, JH (Zhao, Jinghao)[ 1,2,3 ]
;
Yu, XF (Yu, Xuefeng)[ 1,2 ]
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2020/12/11
SiC MOSFET
total ionizing dose irradiation
time-dependent dielectric breakdown
Nanowire gate-all-around MOSFETs modeling: ballistic transport incorporating the source-to-drain tunneling
期刊论文
Japanese Journal of Applied Physics, 2020, 卷号: 59, 期号: 7, 页码: 1-9
作者:
Cheng H(程贺)
;
Liu TF(刘铁锋)
;
Zhang C(张超)
;
Liu ZF(刘志峰)
;
Yang ZJ(杨志家)
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2020/07/11
ballistic transport
cylindrical gate-allaround (GAA) MOSFET
compact model
Wentzel-Kramers-Brillouin (WKB) approximation
the source-to-drain tunneling
Online junction temperature estimation method for SiC modules with built-in NTC sensor
期刊论文
CPSS Transactions on Power Electronics and Applications, 2019, 卷号: Vol.4 No.1, 页码: 94-99
作者:
Ping Liu
;
Changle Chen
;
Xing Zhang
;
Shoudao Huang
收藏
  |  
浏览/下载:101/0
  |  
提交时间:2019/12/13
Silicon carbide
Junctions
MOSFET
Temperature sensors
Impedance
Heating systems
Mathematical model
Boundary conditions
junction temperature
silicon carbide (SiC)
thermal model.
Carrier-Based Double Integral Sliding-Mode Controller of Class-D Amplifier
期刊论文
IEEE Access, 2019, 卷号: Vol.7, 页码: 1275-1283
作者:
Xiaohua Wu
;
Haider Zaman
;
Xiancheng Zheng
;
Shahbaz Khan
;
Husan Ali
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/12/13
Mathematical
model
Frequency
response
Q-factor
Control
systems
Switching
frequency
Silicon
carbide
Voltage
control
Carrier-based
double
integral
sliding-mode
(CBDISM)
class-D
amplifier
Q-factor
SiC
MOSFET
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