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浏览/检索结果: 共2条，第1-2条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Vertical-external-cavity surface-emitting lasers: Numerical simulation, and characterization (EI CONFERENCE) 会议论文 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China Yan C.; He C.; Lu G.; Qin L. 收藏  |  浏览/下载：16/0  |  提交时间：2013/03/25 Firstly  the vertical external-cavity surface-emiting lasers (VECSELs) device structure and model was given  and the output characteristic was simple calculated. Then  in experiment  the VECSELs were grown  bonded on to the heat sink  and optically pumped by high-power 808nm diode laser array with fiber output module  the light emission spectra were measured. Finally  The thermal characteristic of the VECSELs was investigated by changing the temperature of the substrate. 2008 SPIE.   Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China He C.-F.; Lu G.-G.; Shan X.-N.; Sun Y.-F.; Li T.; Qin L.; Yan C.-L.; Ning Y.-Q.; Wang L.-J. 收藏  |  浏览/下载：15/0  |  提交时间：2013/03/25 By using bottom-emitting structure  we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well  single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron  heavy and light holes. According to the transition selection rule  we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells  we calculated the gain of VECSEL using transition matrix elements of electron  heavy and light holes. We give out the threshold gain  output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror  active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.