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浏览/检索结果: 共3条，第1-3条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Fabrication of ZnO thin film transistors based on the substrate of glass (EI CONFERENCE) 会议论文 2009 International Symposium on Liquid Crystal Science and Technology, August 2, 2009 - August 5, 2009, Kunming, China Yang X.; Wang C.; Zhao C.; Tang W.; Gao X.; Yang J.; Liu B.; Qi X.; Du G.; Cao J. 收藏  |  浏览/下载：23/0  |  提交时间：2013/03/25 Abstract. In our paper  we induced the process of ZnO based thin film transistors (ZnO-TFTs) fabricated on the substrate of glass. The photolithographic plate designed for using in the ZnO-TFT devices fabrication process was shown in our paper. The ZnO-TFT devices were fabricated successfully  the Ion/off ratio is 104. (2010) Trans Tech Publications.   Study of the fabrication of ZnO-TFT (EI CONFERENCE) 会议论文 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Wang C.; Yang X. T.; Zhu H. C.; Ma X. M.; Fu G. Z.; Jing H.; Chang Y. C.; Du G. T. 收藏  |  浏览/下载：19/0  |  提交时间：2013/03/25 Znic Oxide (ZnO) as a shorter wavelength luminescent material concerning its outstanding properties of a wide band-gap semiconductor  it can be used as the active channel layer to fabricate thin film transistor (TFT) and transparent thin film transistor(TTFT). In this paper  we introduced ZnO-TFT using different substrate material  insulator material  electrode material of gate  source and drain in its device.   The fabrication and study of ZnO-based thin film transistors (EI CONFERENCE) 会议论文 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Yang X. T.; Ma X. M.; Zhu H. C.; Gao W. T.; Jin H.; Qi X. W.; Gao B.; Dong X. R.; Fu G. Z.; Jing H.; Wang C.; Chang Y. C.; Du G. T.; Cao J. L. 收藏  |  浏览/下载：14/0  |  提交时间：2013/03/25 Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO-TF-TS) have been constructed. The ZnO layers were deposited using metal organic chemical vapor deposition (MOCVD)[1-3] at about 360C. SiO2 was used as the material of gate insulator to suppress the leakage current effectively and to enable the ZnO-TFT to operate successfully. The drain current on-to-off ratio of ZnO-TFTs fabricated on the substrate of glass is about 104. The average optical transmission of ZnO-TFTs in the visible portion is 80%. All above shows that it is possible to fabricate a transparent TFT using ZnO as an active channel layer instead of the traditional Si material.