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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Diode-pumped Yb:YAG thin disk laser with a novel multi-pass pump and cooling arrangement 会议论文 applied mechanics and materials, 2013 Song Qiong Ge; Cheng Guang Hua; Zhu Jiang Feng 收藏  |  浏览/下载：12/0  |  提交时间：2014/09/17 The application of super-RENS mask in high density mastering 会议论文 ADVANCES IN OPTICAL DATA STORAGE TECHNOLOGY, Conference on Advances in Optical Data Storage Technology, Beijing, PEOPLES R CHINA, Web of Science, INSPEC Song, J; Xu, DY; Qi, GS; Shen, QH 收藏  |  浏览/下载：2/0 Friction and Wear Property of Amorphous Carbon Films Prepared by Ion Beam Assisted Deposition 会议论文 5th China International Symposium on Tribology/1st International Tribology Symposium of IFToMM rong sun; shuhui yu; ruxu du; qunji xue 收藏  |  浏览/下载：18/0  |  提交时间：2015/08/21 The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China He C.-F.; Qin L.; Li J.; Cheng L.-W.; Liang X.-M.; Ning Y.-Q.; Wang L.-J. 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25 The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser  and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power  the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime  so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells  and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger  the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs  This three QWs structure can add the quantum state of QW  increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.   The spectral feature analysis of semiconductor thin disk laser - art. no. 67820E 会议论文 2007 He C. F.; Qin L.; Li J.; Cheng L. W.; Liang X. M.; Ning Y. Q.; Wang L. J. 收藏  |  浏览/下载：10/0  |  提交时间：2013/03/28