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大连化学物理研究所 [2]
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P-doped SiO2 Proton Conducting Films for Low Voltage Thin Film Transistors
会议论文
0, 0, 0
Guo LQ(郭立强)
;
Liqiang Guo * a, Zhaojun Guob, Yuanyuan Yangc and Jumei Zhoud
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浏览/下载:16/0
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提交时间:2013/12/16
Funding for Clean Energy R&D by the Chinese Academy of Sciences
会议论文
2010 international chemical congress of pacific basin societies, 夏威夷, 2010-12-15
包信和
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浏览/下载:23/0
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提交时间:2012/07/09
A first-principles study of adsorption of metal adatoms on ultrathin oxide film FeO/Ru(0001) in the presence of CO
会议论文
18th international vacuum congress, 中国, 2010-8-23
欧阳润海
;
李微雪
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浏览/下载:15/0
  |  
提交时间:2011/07/11
An innovated process of Pt/PbTiO3/PbZr0.3Ti0.7O3/PbTiO3/Pt integrated ferroelectric capacitors for FeRAM
会议论文
INTEGRATED FERROELECTRICS, 18th International Symposium on Integrated Ferroelectrics, Honolulu, HI, Web of Science
Wang, Longhai
;
Yu, Jun
;
Wen, Xin'yi
;
Wang, Yunbo
;
Gao, Junxiong
;
Liu, Feng
;
Wei, Chao-Gang
;
Ren, Tian-Ling
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浏览/下载:4/0
Optical characteristic of ion beam sputter deposited aluminum thin films (EI CONFERENCE)
会议论文
International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Optoelectronic System Design, Manufacturing, and Testings, September 9, 2007 - September 12, 2007, Beijing, China
Jin W.
;
Jin C.
;
Zhu H.
;
Liu L.
;
Yang H.
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浏览/下载:19/0
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提交时间:2013/03/25
Aluminum is a typical active metal very easy to oxidize. An oxide surface layer of about 2-6nm quickly formed in air which adds difficulty to the optical constants determination. An ex-situ method is used to determine the optical constants of aluminum thin films. First
Second
Third
alumina (Al2O3) thin film is deposited by ion beam sputter deposition. The optical constants and thickness are determined by spectral ellipsoemtry (SE). The thickness is verified by grazing x-ray reflection (GXRR) fitting method
Al thin film with an Al2O3 cap layer on top is deposited. This cap layer is of the same deposition condition with the first step. By fitting the GXRR spectra
based on the acquired structure information
the structure information (the thickness of the aluminum and the cap layer
the ellipsometric spectra are fitted. The optical constants of the aluminum layer are extracted with the aid of the Drude model. Finally
surface roughness and the diffusion between Al-Al2O 3) is obtained
an induced transmission filter (ITF) is designed and deposited.
Thickness effect and mesoscopic character of the metal oxide gas sensing nano-thin films
会议论文
China International Conference on Nanoscience and Technology (ChinaNANO 2005), JUN 09-11, 2005
作者:
Xing Jianping
;
Li Juan
;
Zhou Lei
;
Li Jianming
;
Qiu Nanyuan
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浏览/下载:1/0
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提交时间:2019/12/31
thickness effect
diffusion reaction
thin film
gas sensing
Metal-free growth of Si/SiO2 nanowires by annealing SiOx (x < 2) films deposited by PECVD
会议论文
symposium on group-4 semiconductor nanostructures held at the 2004 mrs fall meeting, boston, ma, nov 29-dec 02, 2004
Wang, XX
;
Zhang, JG
;
Wang, QM
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浏览/下载:202/48
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提交时间:2010/03/29
SILICON NANOWIRES
Hetero-epitaxial growth of ZnO films on silicon by low-pressure metal organic chemical vapor deposition
会议论文
7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004
Wang, QY
;
Shen, WJ
;
Wang, J
;
Wang, JH
;
Zeng, YP
;
Li, JM
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浏览/下载:195/31
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提交时间:2010/03/29
ULTRAVIOLET-LASER EMISSION
THIN-FILMS
ZINC-OXIDE
ROOM-TEMPERATURE
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