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Simulation study on the effect of interface charge between oil and paper 会议论文
作者:  Wu, Kai;  Zhu, Qingdong;  Tu, Yang;  Dai, Jie
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/03
Investigation of lithium difluoro(sulfato)borate as a salt of electrolyte for high-temperature lithium-ion batteries 会议论文
Xi'an, China, April 26, 2014 - April 28, 2014
作者:  Lia, Shi You;  Li, Xiao Peng;  Mao, Li Ping;  Cui, Xiao Ling
收藏  |  浏览/下载：20/0  |  提交时间：2020/11/15
Formation of coinage metal-carbonyl complexes on oxide surfaces 会议论文
international symposium on the current status ofsurface and interface research in theory and experiment, 柏林, 2011-6-29
欧阳润海; 李微雪
收藏  |  浏览/下载：13/0  |  提交时间：2012/07/09
Effect of La/sub 2/O/sub 3/ and CeO/sub 2/ on Nb/sub 2/O/sub 5/ doped TiO/sub 2/ ceramic varistors 会议论文
Key Engineering Materials, 3rd International Conference on High-Performance Ceramics (CICC-3), Shenzhen, China, INSPEC
Jia Mi; Zilong Tang; Shaohua Luo; Zhongtai Zhang
收藏  |  浏览/下载：4/0
Effect of Surface Morphology on Protein Adsorption onto Alginate-Chitosan-Alginate(ACA) Microcapsules 会议论文
the second international symposium on surface and interface of biomaterials, 中国, 2010-1-4
谢红国; 郑佳妮; 李晓霞; 谢威扬; 王锋; 马小军
收藏  |  浏览/下载：12/0  |  提交时间：2011/07/11
The Effect of Temperature Gradient on Space Charge Accumulation at SR/XLPE Interface under DC Stress 会议论文
作者:  Wang, Xia;  Zheng, Mingbo;  Chen, Xi;  Peng, Zongren;  Wu, Kai
收藏  |  浏览/下载：1/0  |  提交时间：2019/12/18
UV Raman Spectroscopic Studies on Surface Phase Transformation and Photocatalytic Performance of TiO2 会议论文
21st nam, usa, 2009-6-7
李灿
收藏  |  浏览/下载：39/0  |  提交时间：2011/07/11
The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文
Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China
Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G.
收藏  |  浏览/下载：18/0  |  提交时间：2013/03/25
The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress  it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping  a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper  controlling different flow ratio of source gas SiH4 and NH3  and a great deal of tests (ellipsometer  infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators  three different capacitance samples in MIS structure were done  degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation  this result indicated that the defect density of this type SiN x was smaller  and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT  SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.  
MECHANISM OF NEMATIC MOLECULAR ALIGNMENT BASED ON FRICTION CHARGES AND SURFACE-TOPOLOGY BY RUBBING 会议论文
PISA, ITALY, JUN 21-26, 1992
作者:  SUGIMURA, A;  ZHONGCAN, OY
收藏  |  浏览/下载：0/0  |  提交时间：2019/07/24
Effect of dipole layer of Alq3 and metal on organic electroluminescence 会议论文
2007年国际有色金属大会, 长沙, 2007
作者:  XU Xue
收藏  |  浏览/下载：6/0  |  提交时间：2020/01/13

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