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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 InN Nanowire Transistors: Growth, Electronics & Photonics 会议论文 3rd IEEE International Nanoelectronics Conference, City Univ Hong Kong, Hong Kong, 2010-01 作者:  Cheng GS (程国胜) 收藏  |  浏览/下载：8/0  |  提交时间：2011/03/14 Growth of ZnO films under different oxygen partial pressures by metal organic chemical vapour deposition (EI CONFERENCE) 会议论文 2009 International Symposium on Liquid Crystal Science and Technology, August 2, 2009 - August 5, 2009, Kunming, China Wang C.; Yang X.; Liu B.; Zhao C.; Tang W.; Yang J.; Gao X.; Liang H.; Zhao J.; Sun J.; Du G. 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25 ZnO films were grown under different oxygen partial pressures by metal organic chemical vapor deposition on the substrates of Corning glass. We investigated the quality of the films by SIEMENS D8 X-ray diffractometer. The surface morphology of the films were observed by Digital Nanoscope IIIa AFM with normal silicon nitride tip in the contact mode. The hall effect measurements were carried out with indium ohmic contact. The transmission spectrum of the films were measured. The transmission ratio is larger than 80% in the region above the wavelength of 385nm  and sharply decreased under 10% below the wavelength of 375 nm. (2010) Trans Tech Publications.   Growth and photoluminescence of InAlGaN films 会议论文 5th international conference on nitride semiconductors (icns-5), nara, japan, may 25-30, 2003 作者:  Li DB 收藏  |  浏览/下载：13/2  |  提交时间：2010/10/29 MULTIPLE-QUANTUM WELLS  QUATERNARY ALLOYS  OPTICAL-PROPERTIES   The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells 会议论文 international workshop on nitride semiconductors (iwn 2002), aachen, germany, jul 22-25, 2002 作者:  Jiang DS 收藏  |  浏览/下载：16/2  |  提交时间：2010/10/29 LUMINESCENCE  LOCALIZATION   Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures 会议论文 international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000 作者:  Han PD 收藏  |  浏览/下载：19/0  |  提交时间：2010/10/29 AlGaN/GaN heterostructures  In-doping  2DEG  electron sheet density  X-ray diffraction  etching  CHEMICAL-VAPOR-DEPOSITION  MOLECULAR-BEAM EPITAXY  PHASE EPITAXY  MOBILITY  GROWTH  FILMS