CORC

在结果中检索

CORC

浏览/检索结果: 共14条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
MBE growth and characterization of type-II InAs/GaSb superlattices LWIR materials and photodetectors with barrier structures 会议论文
作者:  Xu ZC;  Chen JX;  Wang FF;  Zhou Y;  Bai ZZ
收藏  |  浏览/下载：27/0  |  提交时间：2018/11/20
Photonic crystal based on anti-reflection structure for GaN/InGaN heterojunction solar cells 会议论文
作者:  Ding, Wen;  Xia, Deyang;  Li, Qiang;  Huang, Yaping;  Zheng, Min
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/02
Zinc oxide/copper oxide heterogeneous nanowire preparation and application in UV sensor 会议论文
2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014, Toronto, ON, Canada, August 18-21, 2014
作者:  Wei FN(魏发南);  Liu LQ(刘连庆);  Li GY(李广勇)
收藏  |  浏览/下载：21/0  |  提交时间：2015/01/30
The heterojunction structure of n-Si/p-nanocrystalline diamond film for UV detection 会议论文
6th International Conference on Thin Film Physics and Applications, TFPA 2007, 2007-09-25
作者:  Wang, Linjun[1];  Liu, Jianmin[2];  Xu, Run[3];  Huang, Jian[4];  Shi, Weimin[5]
收藏  |  浏览/下载：4/0  |  提交时间：2019/05/06
AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Tang, J; Wang, XL; Xiao, HL; Ran, JX; Wang, CM; Wang, XY; Hu, GX; Li, JM
收藏  |  浏览/下载：46/0  |  提交时间：2010/03/09
AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD 会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
作者:  Hou QF;  Zhang ML
收藏  |  浏览/下载：52/0  |  提交时间：2010/03/09
Studies on the heterojunction structure of n-Si/p-nanocrystalline diamond film 会议论文
SURFACE REVIEW AND LETTERS, 2007-08-01
作者:  Wang, Linjun[1];  Liu, Jianmin[2];  Ren, Ling[3];  Su, Qingfeng[4];  Xu, Run[5]
收藏  |  浏览/下载：3/0  |  提交时间：2019/05/10
On the performance analysis and design of a novel shared-layer integrated devices using RCE-p-i-n-PD/SHBT - art. no. 67820J 会议论文
conference on optoelectronic materials and devices ii, wuhan, peoples r china, nov 02-05, 2007
Shou-Li Z; De-Ping X; Ya-Li I; Hai-Lin C; Yin-Zhe C; Ang M; Ji-He L; Jun-Hua G
收藏  |  浏览/下载：45/0  |  提交时间：2010/03/09
Research on a novel structure of SiGeC/Si heterojunction power diodes 会议论文
IPEMC 2006: CES/IEEE 5th International Power Electronics and Motion Control Conference, Shanghai, China, 2006-08-14
作者:  Jing, Liu;  Yong, Gao;  Li, Ma
收藏  |  浏览/下载：1/0  |  提交时间：2019/12/25
Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode (EI CONFERENCE) 会议论文
12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland
Jiao S. J.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Zhang J. Y.; Yao B.; Liu Y. C.; Fan X. W.
收藏  |  浏览/下载：16/0  |  提交时间：2013/03/25
ZnO/GaN p-i-n heterojunctions light emitting diodes were fabricated by plasma-assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n-ZnO/i-ZnO/p-GaN heterojunction light emitting diode. The emission of i-ZnO was obtained due to the limitation effect of i-ZnO on electrons and holes. Moreover  n-ZnO/i-MgO/p-GaN heterojunction light emitting diode was also fabricated. The limitation effect on electrons is increased in this heterojunction. The bright ultraviolet electroluminescence at 382 nm originating from the ZnO layer was observed in the room temperature electroluminescence spectrum. We hope to realize the stimulated emission of ZnO using these heterojunctions by the improvement of crystal quality and the optimization of device structure. 2006 WILEY-VCH Verlag GmbH Co. KGaA.  

©版权所有 ©2017 CSpace - Powered by CSpace