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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy 会议论文 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Niu, ZC; Zhang, SY; Ni, HQ; Wu, DH; He, ZH; Sun, Z; Han, Q; Wu, RG 收藏  |  浏览/下载：224/60  |  提交时间：2010/03/29 IMPROVED LUMINESCENCE EFFICIENCY  TEMPERATURE  PHOTOLUMINESCENCE  NITROGEN  ORIGIN  DIODES   Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z 会议论文 conference on ultrafast phenomena in semiconductors and nanostructure materials x, san jose, ca, jan 23-25, 2006 Sun, Z (Sun, Z.); Xu, ZY (Xu, Z. Y.); Yang, XD (Yang, X. D.); Sun, BQ (Sun, B. Q.); Ji, Y (Ji, Y.); Zhang, SY (Zhang, S. Y.); Ni, HQ (Ni, H. Q.); Niu, ZC (Niu, Z. C.) 收藏  |  浏览/下载：182/36  |  提交时间：2010/03/29 GaInNAs/GaAs quantum wells  optical properties  nonradiative recombination effect  time-resolved photoluminescence  PL decay dynamics  PL thermal quenching  MOLECULAR-BEAM EPITAXY  GAASN ALLOYS  EXCITATION   The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells 会议论文 international workshop on nitride semiconductors (iwn 2002), aachen, germany, jul 22-25, 2002 作者:  Jiang DS 收藏  |  浏览/下载：16/2  |  提交时间：2010/10/29 LUMINESCENCE  LOCALIZATION   Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Li LH; Pan Z; Zhang W; Lin YW; Wang XY; Wu RH 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 characterization  defects  X-ray diffraction  molecular beam epitaxy  nitrides  GAAS   Selective intermixing of Ga(In)NAs/GaAs quantum well structures usingSiO(2) encapsulation and rapid thermal annealing 会议论文 asia-pacific optical and wireless communications conference (apoc 2001), beijing, peoples r china, nov 12-15, 2001 作者:  Xu YQ 收藏  |  浏览/下载：21/0  |  提交时间：2010/10/29 MOLECULAR-BEAM EPITAXY  MU-M   1.3 mu m GaInNAs/GaAs multiple-quantum-wells resonant-cavity-enhanced photodetectors 会议论文 asia-pacific optical and wireless communications conference (apoc 2001), beijing, peoples r china, nov 12-15, 2001 Zhang W; Pan Z; Li LH; Zhang RK; Lin YW; Wu RG 收藏  |  浏览/下载：9/0  |  提交时间：2010/10/29 GaInNAs  photodetector  resonant cavity enhanced  high speed property  MOLECULAR-BEAM EPITAXY  SCHOTTKY PHOTODIODES  PERFORMANCE  EFFICIENCY  OPERATION  BANDWIDTH  DESIGN  SI   1.3 mu m GaInNAs/GaAs quantum well lasers and photodetectors 会议论文 asia-pacific optical and wireless communications conference (apoc 2001), beijing, peoples r china, nov 12-15, 2001 作者:  Xu YQ 收藏  |  浏览/下载：16/0  |  提交时间：2010/10/29 OPERATION   Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Pan Z; Li LH; Zhang W; Wang XU; Lin YW; Wu RH 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/15 adsorption  characterization  radiation  molecular beam epitaxy  nitrides  SURFACE-EMITTING LASER  QUANTUM-WELLS  OPERATION  RANGE   Investigation on integrated high speed DFB light source and narrow bandwidth RCE photodetector for WDM fiber communication network application 会议论文 conference on advanced photonic sensors, beijing, peoples r china, nov 08-10, 2000 Wang QM; Li C; Pan Z; Luo Y 收藏  |  浏览/下载：12/0  |  提交时间：2010/10/29 gain-coupling DFB laser  EA modulator  RCE photodetector  monolithic integration  MU-M  LASER   GaInNAs/GaAs quantum well lasers grown by solid-source molecular beam epitaxy 会议论文 conference on optoelectronic and microelectronic materials and devices, bundoora, australia, dec 06-08, 2000 Pan Z; Li LH; Wang XY; Lin YW 收藏  |  浏览/下载：14/0  |  提交时间：2010/10/29 会议主办方: LA TROBE UNIV, DEPTS ELECTR ENGN & PHYS  OPERATION