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CORC

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Simulation of electrical characteristics of InP/In0.24Ga0.76As0.73Sb0.27/In0.53Ga0.47As double heterojunction bipolar transistor 会议论文
9th IEEE Conference on Industrial Electronics and Applications, ICIEA 2014, 188-200 Moganshan Road, Hangzhou, China, June 9, 2014 - June 11, 2014
作者:  Zhou, Xingbao;  Zhou, Shouli;  Wen, Hao;  Ren, Hongliang;  Huang, Guiyong
收藏  |  浏览/下载：19/0  |  提交时间：2015/09/18
Performance study on a DS/FH hybrid system with concatenated coding in strong partial band noise 会议论文
2011 IEEE International Conference on Signal Processing, Communications and Computing, ICSPCC 2011, 2011-09-14
作者:  Xue, D.;  Zhou, X.
收藏  |  浏览/下载：7/0  |  提交时间：2020/01/06
量子点/染料复合敏化与修饰 会议论文
中国化学会第二十五届学术年会论文摘要集（下册）, Abstracts of the 25th CCS Congress(Ⅱ), 中国化学会第二十五届学术年会, 25th CCS Congress, 中国吉林长春, CNKI, 中国化学会
吴学明; 王鹏; 罗芬; 马蓓蓓; 王立铎; 邱勇; Xueming Wu; Peng Wang; Fen Luo; Beibei Ma; Liduo Wang; Yong Qiu
收藏  |  浏览/下载：4/0
Dielectric properties of TiO2-NiO ceramics and its response mechanism 会议论文
HIGH-PERFORMANCE CERAMICS III, PTS 1 AND 2, 3rd China International Conference on High-Performance Ceramics (CICC-3), Shenzhen, PEOPLES R CHINA, Web of Science
Wang, JF; Lin, YH; Chen, Y; Jiang, L; Nan, CW
收藏  |  浏览/下载：3/0
First-principles study of silicon nanowires with different surfaces 会议论文
JAPANESE JOURNAL OF APPLIED PHYSICS, International Conference on Solid State Devices and Materials, Tsukuba, JAPAN, Web of Science
Gao, Mingzhi; You, Siyu; Wang, Yan
收藏  |  浏览/下载：4/0
Optimization of two-dimensional electron gases and I-V characteristics for AlGaN/GaN HEMT devices 会议论文
SUPERLATTICES AND MICROSTRUCTURES, Meeting of the European-Materials-Research-Society, Strasbourg, FRANCE, Web of Science
Wang, Y; Ma, L; Yu, ZP; Tian, LL
收藏  |  浏览/下载：4/0
Electron transport in polymer-derived amorphous silicon oxycarbonitride ceramics (EI CONFERENCE) 会议论文
Wang Y.; Jiang T.; Zhang L.; An L.
收藏  |  浏览/下载：51/0  |  提交时间：2013/03/25
Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots 会议论文
Chen J; Fan WJ; Xu Q; Zhang XW; Li SS; Xia JB
收藏  |  浏览/下载：45/0  |  提交时间：2010/03/09
Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
He C.-F.; Lu G.-G.; Shan X.-N.; Sun Y.-F.; Li T.; Qin L.; Yan C.-L.; Ning Y.-Q.; Wang L.-J.
收藏  |  浏览/下载：15/0  |  提交时间：2013/03/25
By using bottom-emitting structure  we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well  single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron  heavy and light holes. According to the transition selection rule  we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells  we calculated the gain of VECSEL using transition matrix elements of electron  heavy and light holes. We give out the threshold gain  output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror  active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.  
Electron effective mass and resonant polaron effect in CdTe/CdMgTe quantum wells 会议论文
10th international conference on ii-vi compounds, bremen, germany, sep 09-14, 2001
Karczewski G; Wojtowicz T; Wang YJ; Wu XG; Peeters FM
收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15

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