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Brillouin Scattering Study on Elastic Properties of Bulk hcp ZnO Single Crystal 会议论文
TMS Annual Meeting and Exhibition / Symposium on Characterization of Minerals, Metals, and Materials, 2017-01-01
作者:  Fan, Ping-Ping[1];  Wu, Yong-Quan[2]
收藏  |  浏览/下载:8/0  |  提交时间:2019/04/24
A density functional study of zinc oxide elastic properties under high pressure 会议论文
IUTAM Symposium on Surface Effects in the Mechanics of Nanomaterials and Heterostructures, Beijing, China, AUG 8-12, 2010
作者:  Wang BB(王斌斌);  Zhao YP(赵亚溥)
收藏  |  浏览/下载:16/0  |  提交时间:2014/03/04
A density functional study of zinc oxide elastic properties under high pressure 会议论文
Beijing, China, August 8, 2010 - August 12, 2010
作者:  Wang BB;  Zhao YP(赵亚溥)
收藏  |  浏览/下载:27/0  |  提交时间:2018/11/08
Donor defect in P-diffused bulk ZnO single crystal 会议论文
29th international conference on physics of semiconductors, rio de janeiro, brazil, 2009
Zhao YW (Zhao Youwen); Zhang R (Zhang Rui); Zhang F (Zhang Fan); Dong ZY (Dong Zhiyuan); Yang J (Yang Jun)
收藏  |  浏览/下载:463/158  |  提交时间:2010/10/11
A new model for simulating AC and surge properties of ZnO varistors based on microstructural characteristics 会议论文
HIGH-PERFORMANCE CERAMICS V, PTS 1 AND 2, 5th China International Conference on High-Performance Ceramics (CICC-5), Changsha, PEOPLES R CHINA, Web of Science
Hu, Jun; He, Jinliang; Luo, Fengchao
收藏  |  浏览/下载:3/0
Characterization of bulk ZnO single crystal grown by a CVT method - art. no. 68410F 会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Wei, XC; Zhao, YW; Dong, ZY; Li, JM
收藏  |  浏览/下载:40/0  |  提交时间:2010/03/09
Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE) 会议论文
13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004
Liang H. W.; Lu Y. M.; Shen D. Z.; Yan J. F.; Li B. H.; Zhang J. Y.; Liu Y. C.; Fan X. W.
收藏  |  浏览/下载:26/0  |  提交时间:2013/03/25
High-quality ZnO thin films on c-plane sapphire (Al2O 3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that  below 500 C  ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with 2D growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (0 0 2) peak becomes narrow. From the photoluminescence (PL) spectra  ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature  which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N=7.661016 cm-3 was obtained in the ZnO thin films with the 2D grown  which is closed to that of bulk ZnO. 2005 Elsevier B.V. All rights reserved.  


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