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Thermally accelerated ageing test of 808nm high power diode laser arrays in CW mode 会议论文
17th international conference on electronic packaging technology, icept 2016, wuhan, china, 2016-08-16
作者:  Nie, Zhiqiang;  Wu, Di;  Lu, Yao;  Wu, Dhai;  Wang, Shuna
收藏  |  浏览/下载：85/0  |  提交时间：2016/11/22
黑磷量子点的制备与生物应用 会议论文
2015年中国生物材料大会, haikou, China
作者:  孙正博;  喻学锋
收藏  |  浏览/下载：166/0  |  提交时间：2016/01/27
Indocyanine Green-Loaded Polydopamine Coated Reduced Garphene Oxide for Theranostic Applications 会议论文
ChinaNanomedicine 2015, Hangzhou, China
作者:  Jingnan Zhang;  Dehong Hu;  Haodong Cui;  Guanhui Gao;  Zonghai Sheng
收藏  |  浏览/下载：19/0  |  提交时间：2016/01/27
A 3000W 808nm QCW G-Stack Semiconductor Laser Array 会议论文
20th international symposium on high power laser systems and applications (hpls and a), chengdu, peoples r china, 2014-08-25
作者:  Zhang, Pu;  Wang, Jingwei;  Hou, Dong;  Wang, Zhenfu;  Xiong, Ling Ling
收藏  |  浏览/下载：14/0  |  提交时间：2015/12/04
635/808nm双波长低能激光对人成纤维细胞氧化应激反应的研究 会议论文
第十届全国激光技术与光电子学学术会议, 上海, 2015-03-14
作者:  陈洪丽;  王宏;  王超;  金文东;  穆志明
收藏  |  浏览/下载：1/0  |  提交时间：2020/01/13
Tm~(3+)掺杂锗碲酸盐玻璃的光谱性质研究 会议论文
作者:  高松;  王欣;  范小康;  李科峰;  廖梅松
收藏  |  浏览/下载：86/0  |  提交时间：2016/11/28
Structural improvement of 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) 会议论文
Asia Pacific Conference on Optics Manufacture 2012, APCOM 2012, August 26, 2012 - August 28, 2012, Changchun, China
作者:  Qin L.
收藏  |  浏览/下载：8/0  |  提交时间：2014/05/15
Structural amelioration of 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) (EI CONFERENCE) 会议论文
2nd International Conference on Energy, Environment and Sustainable Development, EESD 2012, October 12, 2012 - October 14, 2012, Jilin, China
Liang X.; Wang L.; Ning Y.; Liu Y.
收藏  |  浏览/下载：16/0  |  提交时间：2013/03/25
920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) has an important application in laser display. We constructed and optimized a 920 nm OPS-VECSEL with active region of In0.09Ga0.91As quantum well (QW) system pumped by 808 nm laser diode module. By the finite element method  self-consistent solutions of the semiconductor electronic and optical equations are realized to calculate the characteristics parameters of OPS-VECSEL. The performances of device especially the mode  the threshold and the optical-optical translation efficiency were analyzed by dealing with different number of QWs (1  2 and 3) in one period  QW depth  barrier width  the component and dimension of the non-absorption layer. We chose an improved structure of them. On this basis  we ameliorated the number of QW periods and the simulation showed that in order to obtain high performance device  the choice of the number of QW periods must be cautious. (2013) Trans Tech Publications  Switzerland.  
Structural amelioration of 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) 会议论文
2nd International Conference on Energy, Environment and Sustainable Development, EESD 2012, October 12, 2012 - October 14, 2012, Jilin, China
Liang X.; Wang L.; Ning Y.; Liu Y.
收藏  |  浏览/下载：12/0  |  提交时间：2014/05/15
2 mu m spectroscopy in Tm3+ doped GeO2-TeO2-based glasses 会议论文
ieee 6th international conference on advanced infocomm technology (icait)
作者:  Peng, Ya-Pei;  Kuan, Pei-Wen;  Zhang, Junjie
收藏  |  浏览/下载：12/0  |  提交时间：2016/11/28

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