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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 内容类型：会议论文    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Observation of photogalvanic current for interband absorption in InN films at room temperature 会议论文 2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008 Tang, CG; Chen, YH; Liu, Y; Zhang, RQ; Liu, XL; Wang, ZG; Zhang, R; Zhang, Z 收藏  |  浏览/下载：38/0  |  提交时间：2010/03/09 QUANTUM-WELLS  SPIN   A Compact Direct Digital Frequency Synthesizer for System-on-chip 会议论文 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 作者:  Hao ZK 收藏  |  浏览/下载：39/0  |  提交时间：2010/03/09 PERFORMANCE   Influence of mode symmetry on quality factors of degenerate states in microlasers with an equilateral triangle resonator 会议论文 conference on semiconductor and organic optoelectronic materials and devices, beijing, peoples r china, nov 09-11, 2004 Chen Q; Huang YZ; Guo WH 收藏  |  浏览/下载：141/34  |  提交时间：2010/03/29 microcavity   Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate 会议论文 symposium on advance characterization of electronic materials held at the 8th iumrs international conference on electronic materials (iumrs-icem2002), xian, peoples r china, jun 10-14, 2002 Wu J; Zeng YP; Cui LJ; Zhu ZP; Wang BX; Wang ZG 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 INP(001)  EPITAXY  GAAS   Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Niu ZC; Wang XD; Miao ZH; Feng SL 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/15 crystal morphology  quantum dots  molecular beam epitaxy  semiconducting gallium arsenide  semiconducting indium gallium arsenide  1.35 MU-M  GAAS-SURFACES  PHOTOLUMINESCENCE  ISLANDS