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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 内容类型：会议论文    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Controllable growth of semiconductor nanometer structures 会议论文 conference on low dimensional structures and devices (ldsd), fortaleza, brazil, dec 08-13, 2002 Wang ZG; Wu J 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 INAS QUANTUM DOTS  SELF-ORGANIZATION  MONOLAYER COVERAGE  DENSITY  GAAS  ISLANDS  INP(001)  EPITAXY   Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Niu ZC; Wang XD; Miao ZH; Feng SL 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 crystal morphology  quantum dots  molecular beam epitaxy  semiconducting gallium arsenide  semiconducting indium gallium arsenide  1.35 MU-M  GAAS-SURFACES  PHOTOLUMINESCENCE  ISLANDS   Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 会议论文 50th iumrs international conference on advanced materials, beijing, peoples r china, jun 13-18, 1999 作者:  Xu B;  Ye XL 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 quantum dots  high index  molecular beam epitaxy  photoluminescence  SURFACE SEGREGATION  ORIENTED GAAS  INGAAS  ISLANDS  WELLS  DISKS   Self-assembled InAs quantum wires on InP(001) 会议论文 11th international semiconducting and insulating materials conference (simc-xi), canberra, australia, jul 03-07, 2000 作者:  Xu B 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 SHORT-PERIOD SUPERLATTICES  VAPOR-PHASE EPITAXY  GAAS  ISLANDS  STATE   Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates 会议论文 50th iumrs international conference on advanced materials, beijing, peoples r china, jun 13-18, 1999 作者:  Ye XL;  Xu B 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 self-assembled quantum dots  InP substrate  high index  In(Ga,Al)As/InAlAs/InP  MBE  MOLECULAR-BEAM-EPITAXY  VAPOR-PHASE EPITAXY  GAAS  ISLANDS  PHOTOLUMINESCENCE  INP(001)  GROWTH  LASERS   Self-organization of the InGaAs GaAs quantum dots superlattice 会议论文 10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998 Zhuang QD; Li HX; Pan L; Li JM; Kong MY; Lin LY 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 X-RAY-DIFFRACTION  ISLANDS  SURFACES  GROWTH   Structural and infrared absorption properties of self-organized InGaAs GaAs quantum dots multilayers 会议论文 40th electronic materials conference (emc-40), charlottesville, virginia, jun 24-26, 1998 Zhuang QD; Li JM; Zeng YP; Pan L; Chen YH; Kong MY; Lin LY 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 InGaAs GaAs quantum dots  infrared absorption  self-organization  X-RAY-DIFFRACTION  ISLANDS  TRANSITIONS   The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix 会议论文 10th international conference on superlattices, microstructures and microdevices, lincoln, nebraska, jul 08-11, 1997 Wang ZM; Feng SL; Lu ZD; Zhao Q; Yang XP; Chen ZG; Xu ZY; Zheng HZ 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 GROWTH  INTERDIFFUSION  ISLANDS  SCALE