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Ultra-short pulse silicon nitride laser ablation method involves establishing super ablation of laser, to initialize simulation parameters, using plasma density border condition of iodine oxide-cyanide-triiodothyronine material. 专利
申请日期: 2013-01-01, 公开日期: 2013-08-28
作者:  GUO D MA G WU D YAO L NIU F
收藏  |  浏览/下载:8/0  |  提交时间:2019/12/13
Cell-level integrated plasma etching simulation method, involves simulating movement state of ions in space of particle, activating level set function for carrying smooth etching process, and reconstructing initial level set function. 专利
申请日期: 2013-01-01, 公开日期: 2013-04-24
作者:  DAI Z YAN P YANG M YAN J ZHANG S
收藏  |  浏览/下载:4/0  |  提交时间:2019/12/13


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