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Method of epitaxial growth of (IV)x(iii-v)(1-x) alloy and method of converting group iii-v semiconductor structure into irregular alloy and hetero structure and semiconductor device constituted by the same 专利
专利号: JP1989001227A, 申请日期: 1989-01-05, 公开日期: 1989-01-05
作者:  ROBAATO DEII BAANAMU
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