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Ge1Sb2Te4 based chalcogenide random access memory array fabricated by 0.18-mu m CMOS technology 期刊论文
CHINESE PHYSICS LETTERS, 2007, 卷号: 24, 期号: 3, 页码: 790-792
Zhang, T; Song, ZT; Feng, GM; Liu, B; Wu, LC; Feng, SL; Chen, B
收藏  |  浏览/下载:12/0  |  提交时间:2012/03/24
Characteristics of Sn-doped Ge2Sb2Te5 films used for phase-change memory 期刊论文
CHINESE PHYSICS LETTERS, 2005, 卷号: 22, 期号: 11, 页码: 2929-2932
Xu, C; Liu, B; Song, ZT; Feng, SL; Chen, B
收藏  |  浏览/下载:16/0  |  提交时间:2012/03/24
Optimal design of the active regions for InGaAsSb/AlGaAsSb long wavelength multi quantum well lasers 期刊论文
ACTA PHYSICA SINICA, 2004, 卷号: 53, 期号: 1, 页码: 218-225
Xu, GY; Li, AZ
收藏  |  浏览/下载:13/0  |  提交时间:2012/03/24
Study on the relation between magnetic moment and charge transfer of metallic glasses by LCAO-Xo method 期刊论文
CHINESE PHYSICS LETTERS, 1996, 卷号: 13, 期号: 3, 页码: 196-198
Liu, HL; Chen, NY; Ni, M; He, LM; Jin, QY
收藏  |  浏览/下载:9/0  |  提交时间:2012/03/25
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