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Bottom-Gate Approach for All Basic Logic Gates Implementation by a Single-Type IGZO-Based MOS Transistor with Reduced Footprint 期刊论文
ADVANCED SCIENCE, 2020, 卷号: 7, 期号: 6
作者:  Qi, Shaocheng;  Cunha, Joao;  Guo, Tian-Long;  Chen, Peiqin;  Zaccaria, Remo Proietti
收藏  |  浏览/下载:13/0  |  提交时间:2020/12/16
Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint 期刊论文
NANO RESEARCH, 2020, 卷号: 14, 期号: 1, 页码: 232-238
作者:  Dai, Chaoqi;  Chen, Peiqin;  Qi, Shaocheng;  Hu, Yongbin;  Song, Zhitang
收藏  |  浏览/下载:4/0  |  提交时间:2020/12/16
Improving Unipolar Resistive Switching Uniformity with Cone Shaped Conducting Filaments and Its Logic-In-Memory Application 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2018, 卷号: 10, 期号: 7, 页码: 6453-6462
作者:  Yang, Huali;  Liu, Gang;  Chen, Qilai;  Xue, Wuhong;  Shang, Jie
收藏  |  浏览/下载:66/0  |  提交时间:2018/12/04


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