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Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43004
He, Jifang; Shang, Xiangjun; Li, Mifeng; Zhu, Yan; Chang, Xiuying; Ni, Haiqiao; Xu, Yingqiang; Niu, Zhichuan
收藏  |  浏览/下载：73/0  |  提交时间：2012/06/14
Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy 期刊论文
chinese physics b, 2008, 卷号: 17, 期号: 3, 页码: 1119-1123
Gao, HL; Zeng, YP; Wang, BQ; Zhu, ZP; Wang, ZG
收藏  |  浏览/下载：54/6  |  提交时间：2010/03/08
Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 11, 页码: 4097-4100
Lin, GQ; Zeng, YP; Wang, XL; Liu, HX
收藏  |  浏览/下载：20/0  |  提交时间：2010/03/08
Influence of nitridation time on the morphology of GaN nanorods synthesized by nitriding Ga2O3/ZnO films 期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 35, 期号: 1, 页码: 117-120
Gao HY (Gao Haiyong)
收藏  |  浏览/下载：32/0  |  提交时间：2010/04/11
The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells 会议论文
international workshop on nitride semiconductors (iwn 2002), aachen, germany, jul 22-25, 2002
作者:  Jiang DS
收藏  |  浏览/下载：16/2  |  提交时间：2010/10/29
Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate 期刊论文
international journal of modern physics b, 2002, 卷号: 16, 期号: 28-29, 页码: 4423-4426
Wu J; Zeng YP; Cui LJ; Zhu ZP; Wang BX; Wang ZG
收藏  |  浏览/下载：86/0  |  提交时间：2010/08/12
Influence of ion energy and deposition temperature on the surface morphology of carbon films deposited by ion beams 期刊论文
acta physica sinica, 2001, 卷号: 50, 期号: 7, 页码: 1324-1328
Liao MY; Qin FG; Chai CL; Liu ZK; Yang SY; Yao ZY; Wang ZG
收藏  |  浏览/下载：127/13  |  提交时间：2010/08/12
Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 期刊论文
physica e, 2000, 卷号: 8, 期号: 2, 页码: 134-140
作者:  Ye XL;  Xu B
收藏  |  浏览/下载：52/0  |  提交时间：2010/08/12
Influence of dual incorporation of In and N on the luminescence of GaInNAs/GaAs single quantum wells 期刊论文
applied physics letters, 2000, 卷号: 77, 期号: 25, 页码: 4148-4150
作者:  Jiang DS
收藏  |  浏览/下载：42/0  |  提交时间：2010/08/12
Influence of lateral propagating modes on laser output characteristics in selectively oxidized vertical cavity surface-emitting lasers with double oxide layers 期刊论文
journal of applied physics, 1999, 卷号: 86, 期号: 7, 页码: 3519-3524
Huang YZ
收藏  |  浏览/下载：31/0  |  提交时间：2010/08/12

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