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科研机构
半导体研究所 [50]
内容类型
期刊论文 [43]
会议论文 [7]
发表日期
2013 [1]
2011 [6]
2010 [4]
2009 [7]
2008 [4]
2007 [1]
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半导体物理 [50]
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Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating
期刊论文
nano letters, 2013, 卷号: 13, 期号: 6, 页码: 2831-2836
Tongay, Sefaattin
;
Zhou, Jian
;
Ataca, Can
;
Liu, Jonathan
;
Kang, Jeong Seuk
;
Matthews, Tyler S.
;
You, Long
;
Li, Jingbo
;
Grossman, Jeffrey C.
;
Wu, Junqiao
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浏览/下载:17/0
  |  
提交时间:2014/04/30
Ferromagnetic nature of (Ga, Cr)As epilayers revealed by magnetic circular dichroism
期刊论文
solid state communications, 2011, 卷号: 151, 期号: 6, 页码: 456-459
Wu H
;
Gan HD
;
Zheng HZ
;
Lu J
;
Zhu H
;
Ji Y
;
Li GR
;
Zhao JH
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  |  
浏览/下载:64/5
  |  
提交时间:2011/07/05
Magnetic semiconductors
Molecular beam epitaxy
Magneto-optical effects
TRANSPORT-PROPERTIES
SEMICONDUCTOR
(GA,CR)AS
Raman study of ultrathin Fe(3)O(4) films on GaAs(001) substrate: stoichiometry, epitaxial orientation and strain
期刊论文
journal of raman spectroscopy, 2011, 卷号: 42, 期号: 6, 页码: 1388-1391
Zhang, J
;
Tan, PH
;
Zhao, WJ
;
Lu, J
;
Zhao, JH
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  |  
浏览/下载:24/0
  |  
提交时间:2012/01/06
Raman spectroscopy
ultrathin Fe(3)O(4) film
crystal orientation
strain
phonon strain-shift coefficient
PULSED-LASER DEPOSITION
THIN-FILMS
SPIN-TRANSPORT
MAGNETITE
SEMICONDUCTORS
SPINTRONICS
SCATTERING
CORROSION
DEVICES
GROWTH
Hole mediated magnetism in Mn-doped GaN nanowires
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 7, 页码: article no.74313
作者:
Li JB
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浏览/下载:62/4
  |  
提交时间:2011/07/05
MOLECULAR-BEAM EPITAXY
ROOM-TEMPERATURE
QUANTUM WIRES
SEMICONDUCTORS
FERROMAGNETISM
FIELD
GAMNN
Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43004
He, Jifang
;
Shang, Xiangjun
;
Li, Mifeng
;
Zhu, Yan
;
Chang, Xiuying
;
Ni, Haiqiao
;
Xu, Yingqiang
;
Niu, Zhichuan
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  |  
浏览/下载:73/0
  |  
提交时间:2012/06/14
Atomic force microscopy
Buffer layers
Epitaxial growth
Gallium alloys
Gallium arsenide
Germanium
Growth temperature
High resolution transmission electron microscopy
Molecular beam epitaxy
Molecular beams
Semiconducting gallium
Semiconductor device structures
Semiconductor quantum wells
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations
期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:
Li JB
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浏览/下载:59/6
  |  
提交时间:2011/07/05
First principle calculation
Indium nitride
Band gap
Defect
INITIO MOLECULAR-DYNAMICS
AUGMENTED-WAVE METHOD
INDIUM NITRIDE
GAP
PSEUDOPOTENTIALS
SEMICONDUCTORS
IMPURITIES
ABSORPTION
DEFECTS
ALLOYS
Fabrication of ferromagnetic GaMnSb by thermal diffusion of evaporated Mn
期刊论文
journal of crystal growth, 2011, 卷号: 316, 期号: 1, 页码: 145-148
Yang GD
;
Zhu F
;
Dong S
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  |  
浏览/下载:65/2
  |  
提交时间:2011/07/05
Diffusion
Physical vapor deposition processes
Magnetic materials
Semiconducting III-V materials
GASB/MN DIGITAL ALLOYS
ROOM-TEMPERATURE FERROMAGNETISM
RAMAN-SCATTERING
MAGNETOTRANSPORT PROPERTIES
EPITAXIAL LAYERS
THIN-FILMS
SEMICONDUCTORS
STRAIN
MAGNETOELECTRONICS
SPINTRONICS
First-principles prediction of the magnetism of 3d transition-metal-doped Rocksalt MgO
期刊论文
physics letters a, 2010, 卷号: 374, 期号: 10, 页码: 1292-1296
Shi LJ (Shi Li-Jie)
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浏览/下载:19/3
  |  
提交时间:2010/04/13
Ferromagnetism
Half-metal
Double-exchange mechanism
TEMPERATURE FERROMAGNETISM
ELECTRIC PROPERTIES
ZNO FILMS
II-VI
SEMICONDUCTORS
SPINTRONICS
MODEL
SPIN
GAS
Band-tail shape and transport near the metal-insulator transition in Si-doped
期刊论文
physical review b, 2010, 卷号: 82, 期号: 12, 页码: art. no. 125202
Misuraca J (Misuraca Jennifer)
;
Trbovic J (Trbovic Jelena)
;
Lu J (Lu Jun)
;
Zhao JH (Zhao Jianhua)
;
Ohno Y (Ohno Yuzo)
;
Ohno H (Ohno Hideo)
;
Xiong P (Xiong Peng)
;
von Molnar S (von Molnar Stephan)
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  |  
浏览/下载:26/0
  |  
提交时间:2010/10/11
PERSISTENT PHOTOCONDUCTIVITY
DX CENTERS
ALXGA1-XAS
GAAS
SEMICONDUCTORS
Origin of ferromagnetism in self-assembled Ga1-xMnxAs quantum dots grown on Si
期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 24, 页码: article no.242505
作者:
Chen L
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  |  
浏览/下载:62/0
  |  
提交时间:2011/07/05
MN
SEMICONDUCTORS
SPINTRONICS
ELECTRONICS
(GA,MN)AS
GAAS
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