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科研机构
半导体研究所 [16]
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期刊论文 [15]
会议论文 [1]
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2011 [3]
2010 [2]
2008 [1]
2006 [1]
2003 [5]
2002 [1]
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半导体物理 [16]
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First principles study of p-type doping in SiC nanowires: role of quantum effect
期刊论文
journal of nanoparticle research, 2011, 卷号: 13, 期号: 7, 页码: 2887-2892
作者:
Li JB
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浏览/下载:46/4
  |  
提交时间:2011/07/07
SiC nanowires
p-type doping
First principles
Modeling and simulation
First principles study of the electronic properties of twinned SiC nanowires
期刊论文
journal of nanoparticle research, 2011, 卷号: 13, 期号: 1, 页码: 185-191
作者:
Li JB
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浏览/下载:100/6
  |  
提交时间:2011/07/05
Twinned SiC nanowires
Electronic properties
Ab initio
Modeling and simulation
SILICON-CARBIDE NANOWIRES
FIELD-EMISSION PROPERTIES
MOLECULAR-BEAM EPITAXY
INAS NANOWIRES
GROWTH
NANOTUBES
NITRIDE
DIFFUSION
NANORODS
ENERGY
Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.54503
作者:
Jiang XW
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浏览/下载:50/2
  |  
提交时间:2011/07/05
FIELD-EFFECT TRANSISTORS
SEMICONDUCTOR-DEVICES
SILICON DEVICES
MONTE-CARLO
MOSFETS
NANOTRANSISTORS
APPROXIMATION
EQUATIONS
DESIGN
MODELS
Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs
期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 5, 页码: art. no. 057101
Deng HX (Deng Hui-Xiong)
;
Jiang XW (Jiang Xiang-Wei)
;
Tang LM (Tang Li-Ming)
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  |  
浏览/下载:101/3
  |  
提交时间:2010/05/24
SIMULATION
TRANSISTORS
LIMIT
NM
Tensile and compressive mechanical behavior of twinned silicon carbide nanowires
期刊论文
acta materialia, 2010, 卷号: 58, 期号: 6, 页码: 1963-1971
作者:
Li JB
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  |  
浏览/下载:63/1
  |  
提交时间:2010/04/22
Twinning
Nanotructures
Fracture
Buckling
Molecular dynamics
CHEMICAL-VAPOR-DEPOSITION
AB-INITIO CALCULATIONS
BETA-SIC NANOWIRES
LOW-TEMPERATURE
THIN-FILMS
SIMULATION
ELASTICITY
NANOTUBES
POLYTYPES
GROWTH
Multiple valley couplings in nanometer Si metal-oxide-semiconductor field-effect transistors
期刊论文
journal of applied physics, 2008, 卷号: 103, 期号: 12, 页码: art. no. 124507
Deng, HX
;
Jiang, XW
;
Luo, JW
;
Li, SS
;
Xia, JB
;
Wang, LW
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浏览/下载:65/5
  |  
提交时间:2010/03/08
SIMULATION
MOSFETS
SUPERLATTICES
REGIME
LIMIT
Influence of longitudinal electric field on the hot-phonon effect in quantum wells
期刊论文
journal of applied physics, 2006, 卷号: 100, 期号: 1, 页码: art.no.013707
Zhang JZ (Zhang J. -Z.)
;
Zhu BF (Zhu B. -F.)
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浏览/下载:17/0
  |  
提交时间:2010/04/11
CASCADE LASERS
SUPERLATTICES
RELAXATION
RATES
SIMULATION
TRANSPORT
DYNAMICS
CARRIERS
MODES
Numerical simulation of nc-Si : H/c-Si heterojunction solar cells
期刊论文
acta physica sinica, 2003, 卷号: 52, 期号: 1, 页码: 217-224
Hu ZH
;
Liao XB
;
Zeng XB
;
Xu YY
;
Zhang SB
;
Diao HW
;
Kong GL
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  |  
浏览/下载:58/0
  |  
提交时间:2010/08/12
nc-Si : H/c-Si hetero-junction
solar cell
computer simulation
SILICON HETEROJUNCTION
LAYER
Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth
期刊论文
microelectronic engineering, 2003, 卷号: 66, 期号: 1-4, 页码: 504-509
Zhang ZC
;
Ren BY
;
Chen YH
;
Yang SY
;
Wang ZG
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  |  
浏览/下载:42/0
  |  
提交时间:2010/08/12
Czochralski method
growth from melt
semiconductor silicon
argon gas flow
computer simulation
oxygen content
FURNACE PRESSURE
Improving response speed of electrooptical switch in silicon-on-insulator by modifying modulation area structure
期刊论文
japanese journal of applied physics part 1-regular papers short notes & review papers, 2003, 卷号: 42, 期号: 7a, 页码: 4361-4362
Yan QF
;
Yu JZ
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  |  
浏览/下载:49/0
  |  
提交时间:2010/08/12
electrooptical switch
silicon-on-insulator
modulation area structure
plasma dispersion effect
integrated opotoelectronics
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