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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy 期刊论文 chinese physics b, 2008, 卷号: 17, 期号: 3, 页码: 1119-1123 Gao, HL; Zeng, YP; Wang, BQ; Zhu, ZP; Wang, ZG 收藏  |  浏览/下载：54/6  |  提交时间：2010/03/08 molecular beam epitaxy  semiconducting III-V materials  high electron mobility transistors   Resonant magnetopolaron effects in GaAs/AlGaAs multiple quantum well structures 期刊论文 physica e, 1998, 卷号: 2, 期号: 1-4, 页码: 161-165 Wang YJ; Nickel HA; McCombe BD; Peeters FM; Shi JM; Hai GQ; Wu XG; Eustis TJ; Schaff W 收藏  |  浏览/下载：43/0  |  提交时间：2010/08/12 resonant magnetopolaron effects  GaAs/AlGaAs quantum well structures  interface phonons  electron-optical-phonon interaction  PHONON MODES  GAAS  HETEROSTRUCTURES  SUPERLATTICES  ELECTRONS  POLARON-CYCLOTRON-RESONANCE   Resonant magnetopolaron effects in GaAs/AlGaAs multiple quantum well structures 会议论文 8th international conference on modulated semiconductor structures, santa barbara, california, jul 14-18, 1997 Wang YJ; Nickel HA; McCombe BD; Peeters FM; Shi JM; Hai GQ; Wu XG; Eustis TJ; Schaff W 收藏  |  浏览/下载：15/0  |  提交时间：2010/11/15 resonant magnetopolaron effects  GaAs/AlGaAs quantum well structures  interface phonons  electron-optical-phonon interaction  POLARON-CYCLOTRON-RESONANCE  PHONON MODES  GAAS  HETEROSTRUCTURES  SUPERLATTICES  ELECTRONS   Molecular beam epitaxy growth of Iny2Al1-y2As/In0.73Ga0.27As/Iny1Al1-y1As/InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer 期刊论文 journal of vacuum science & technology b, 1997, 卷号: 15, 期号: 6, 页码: 2021-2025 作者:  Xu B 收藏  |  浏览/下载：44/0  |  提交时间：2010/08/12 HETEROSTRUCTURES